Epitaxial GaAs on Si: Progress and potential applications
DW Shaw - MRS Online Proceedings Library (OPL), 1987 - cambridge.org
Recent successes, such as the demonstration of a 1K SRAM, have established epitaxial
GaAs on Si substrates as a promising technology rather than a device designer's dream. For …
GaAs on Si substrates as a promising technology rather than a device designer's dream. For …
Properties of GaAs on Si grown by molecular beam epitaxy
For several years, there has been a great deal of activity in the growth of GaAs and other
compounds on Si substrates for several reasons. Among them are the high quality, low cost …
compounds on Si substrates for several reasons. Among them are the high quality, low cost …
Achievements and limitations in optimized GaAs films grown on Si by molecular‐beam epitaxy
A Georgakilas, P Panayotatos, J Stoemenos… - Journal of applied …, 1992 - pubs.aip.org
2679 J. Appt. Phys. 71 (6), 15 March 1992 0021-8979/92/062679-23 $04.00.@ I 1992
American Institute of Physics 2679 partly to threading dislocation generation during the early …
American Institute of Physics 2679 partly to threading dislocation generation during the early …
GaAs on Ge for CMOS
G Brammertz, M Caymax, M Meuris, M Heyns, Y Mols… - Thin Solid Films, 2008 - Elsevier
Selective epitaxial growth of GaAs on Ge is a prerequisite for the integration of GaAs and Ge
in the sub-22 nm CMOS nodes. The problems encountered for epitaxial growth of GaAs on …
in the sub-22 nm CMOS nodes. The problems encountered for epitaxial growth of GaAs on …
Molecular beam epitaxy of GaAs and AlGaAs on Si
BY Tsaur, GM Metze - Applied physics letters, 1984 - pubs.aip.org
Epitaxial layers ofGaAs and AI" Ga1_xAs (O. 2< x< O. 5) have been grown directly on
singlecrystal Si (100) substrates, without an intermediate Ge layer, by molecular beam …
singlecrystal Si (100) substrates, without an intermediate Ge layer, by molecular beam …
High quality GaAs on Si using Si0. 04Ge0. 96/Ge buffer layers
R Venkatasubramanian, ML Timmons, JB Posthill… - Journal of crystal …, 1991 - Elsevier
High-quality epitaxial growth of GaAs on Si has been achieved using Si 0.04 Ge 0.96/Ge
buffer layers. GaAs layers, approximately 1.3 μm thick, have been grown on Si using …
buffer layers. GaAs layers, approximately 1.3 μm thick, have been grown on Si using …
Growth and patterning of GaAs/Ge single crystal layers on Si substrates by molecular beam epitaxy
P Sheldon, KM Jones, RE Hayes, BY Tsaur… - Applied physics …, 1984 - pubs.aip.org
Single crystal GaAs layers have been grown on Si substrates with an intermediate Ge layer.
Both the Ge and subsequent GaAs are grown in situ by molecular beam epitaxy (MBE) …
Both the Ge and subsequent GaAs are grown in situ by molecular beam epitaxy (MBE) …
Heteroepitaxial growth and characterization of GaAs on silicon‐on‐sapphire and sapphire substrates
TP Humphreys, CJ Miner, JB Posthill, K Das… - Applied physics …, 1989 - pubs.aip.org
A comparative study pertaining to the molecular beam epitaxial growth of GaAs directly on
silicon‐on‐sapphire and (101̄2) sapphire substrates has been made. Thermal strain is …
silicon‐on‐sapphire and (101̄2) sapphire substrates has been made. Thermal strain is …
Effects of annealing on the carrier concentration of heavily Si‐doped GaAs
JK Kung, WG Spitzer - Journal of Applied Physics, 1973 - pubs.aip.org
Isothermal and isochronal annealing measurements were performed on heavily Si‐doped
GaAs. Infrared reflectivity measurements were used to determine the free‐carrier …
GaAs. Infrared reflectivity measurements were used to determine the free‐carrier …
GaAs heteroepitaxy on an epitaxial Si surface with a low‐temperature process
H Mori, M Tachikawa, M Sugo, Y Itoh - Applied physics letters, 1993 - pubs.aip.org
This letter reports the growth of an anti-phase-free GaAs layer on a (100) epitaxial Si
substrate offset by 0.5” without high-temperature treatment prior to growth. Atomic force …
substrate offset by 0.5” without high-temperature treatment prior to growth. Atomic force …