This article presents a complete plasma etching process to etch high aspect ratio patterns on
III-V/Ge solar cell heterostructure with low damage for the fabrication of multijunction solar …

In this paper, the impact of the plasma process for III-V/Ge heterostructure etching on both
the morphology and the photovoltaic performance is investigated for the fabrication of …

In this work, inductively coupled plasma reactive ion etching processes with SiCl 4/Ar gas
chemistries were optimized to fabricate wafer-scale, high-density, small-area via-holes for …

Microfabrication cycles of III‐V multijunction solar cells include several technological steps
and end with a wafer dicing step to separate individual cells. This step introduces damage at …

Backside contact technology for InGaP/GaAs/InGaAs inverted metamorphic (IMM) triple
junction solar cells is a potential avenue for achieving significant improvements in solar cell …

III-V solar cell cost reduction and direct III-V/Si integration can both be realized by depositing
a thin layer of high-quality Ge on relatively low-cost Si substrates. However, direct epitaxial …

We demonstrate a novel method to fabricate passivated interdigitated back contact (IBC)
crystalline silicon solar cells incorporating a maskless, patterned plasma etching step. After …

Multi-junction solar cell efficiencies far exceed those attainable with silicon photovoltaics;
however, the high cost of materials remains a barrier to their widespread use. Substantial …

New massive markets for space multijunction solar cells are being discussed globally. For
such an explosive increase in demand to materialize, a more sustainable and affordable Ge …

Virtual substrates based on thin Ge layers on Si substrates by direct deposition have
recently achieved high quality. In this work, their application as low cost, removable …