In the semiconductors and related industries, the fabrication of nanostructures and
nanopatterns has become progressive demand for achieving near-atomic accuracy and …

Conspectus Atomic layer control of semiconductor processing is needed as critical
dimensions are progressively reduced below the 10 nm scale. Atomic layer deposition …

Current trends in semiconductor device manufacturing impose extremely stringent
requirements on nanoscale processing techniques, both in terms of accurately controlling …

Atomic layer etching (ALE) can result from sequential, self-limiting thermal reactions. The
reactions during thermal ALE are defined by fluorination followed by ligand exchange using …

The ability to achieve near-atomic precision in etching different materials when transferring
lithographically defined templates is a requirement of increasing importance for nanoscale …

Atomic layer etching (ALE) is the most advanced etching technique in production today. In
this Perspective, we describe ALE in comparison to long-standing conventional etching …

Atomic layer etching (ALE) is a technique for removing thin layers of material using
sequential reaction steps that are self-limiting. ALE has been studied in the laboratory for …

Thermal atomic layer etching (ALE) of Al2O3 and HfO2 using sequential, self-limiting
fluorination and ligand-exchange reactions was recently demonstrated using HF and tin …

Thermal atomic layer etching (ALE) is an important technique for the precise isotropic
etching of nanostructures. Thermal ALE of many materials can be achieved using a two-step …

Thermal atomic layer etching (ALE) can be achieved with sequential, self-limiting surface
reactions. One mechanism for thermal ALE is based on fluorination and ligand-exchange …