Energy distribution and the flux of the ions coming on a surface are considered as the key-
parameters in anisotropic plasma etching. Since direct ion energy distribution (IED) …

Ion-assisted surface processes are the basis of modern plasma processing. Ion energy
distribution (IED) control is critical for precise material modification, especially in atomic-level …

In materials processing applications using low-pressure plasmas, positive ions are typically
accelerated by a sheath electric field directed towards the substrate, where they enhance …

To obtain optimal results from plasma processing, the energy of ions incident on substrate
wafers must be carefully controlled. Such control has been difficult to achieve, however …

A noninvasive, nonperturbing technique for real-time monitoring of ion energy distributions
and total ion current at a wafer surface during plasma processing has been used to monitor …

The capacitively coupled radio-frequency rf discharges (E type have attracted attention over
the years because of their interesting physics and many applications in plasma processing …

Plasma impedance monitoring (PIM) based on electrical measurements is successfully used
as an alternative to determine real time detection endpoint during plasma etching of …

Ion kinetic energy in plasma reactors is controlled by applying radio-frequency (rf) substrate
bias, but the efficiency and reproducibility of such control will be affected if the wafer being …

High resolution energy spectra of ions, accelerated across the sheath at the powered
electrode of an rf gas discharge, are presented. The measured profiles are explained by a …

The incident energy and angle of ions that bombarded the rf biased electrode in an etching
apparatus using inductively coupled Ar–O 2 plasma, were analyzed for the pressure of 4–20 …