Power-modulated (pulsed) plasmas have demonstrated several advantages compared to
continuous wave (CW) plasmas. Specifically, pulsed plasmas can result in a higher etching …

Plasma etching processes at the 22 nm technology node and below will have to satisfy
multiple stringent scaling requirements of microelectronics fabrication. To satisfy these …

Plasma etching, the selective etching of material by reaction with chemically active radicals
in a glow discharge, is dry and clean, and offers process simplification and improved …

Pulsed rf plasmas show promise to overcome challenges for plasma etching at future
technological nodes. In pulsed plasmas, it is important to characterize the transient …

Inductively coupled pulsed plasmas in the presence of synchronous pulsed substrate bias
are characterized in a commercial plasma etching reactor for conductor etching. The …

Pattern transfer by dry etching and plasma-enhanced chemical vapor de position are two of
the cornerstone techniques for modern integrated cir cuit fabrication. The success of these …

Highly selective, highly anisotropic, notch-free and charge-build-up damage-free
polycrystalline silicon etching is performed by using electron cyclotron resonance plasma …

The etching of silicon in a pulsed plasma using SF6 gas is investigated. For short pulses the
Si etch rate for a pulsed plasma is essentially the same as for the continuous plasma, in …

The mechanistic and parametric complexity of a plasma etching environment often causes
confusion and delays in the development of a suitable plasma etching process. This paper is …

Experimental data concerning the dependence of plasma etching rates on the flow rate of
the etching gas have been analyzed in terms of the consumption of the gas, and a simple …