We report a Raman scattering determination of the electron density in InN nanowires from
the analysis of longitudinal optical-phonon-plasmon coupled modes. A Raman peak …

In the literature, there are controversies on the interpretation of the appearance in InN
Raman spectra of a strong scattering peak in the energy region of the unscreened …

In this work, photoluminescence and micro-Raman scattering experiments were performed
on undoped InN nanowires. It was found that, besides the main photoluminescence peak, a …

In the present work, the photoluminescence (PL) characteristics of intrinsic and Si-doped InN
nanowires are studied in detail. For intrinsic InN nanowires, the emission is due to band-to …

An intrinsic property of vertically aligned InN nanowire (NW) ensembles have been
investigated by analysis of coupled longitudinal optical (LO) phonon mode using μ-Raman …

We report the synthesis, optical and transport properties of N-deficient InN nanowires (In: N=
1: 0.82). It is found that these nanowires exhibited a typical metallic conduction behavior …

Raman spectroscopic investigations are carried out on one-dimensional nanostructures of
InN, such as nanowires and nanobelts synthesized by chemical vapor deposition. In …

InN nanowires and faceted hexagonal InN nanotubes are synthesized by catalyst-free
chemical vapor deposition at different temperatures. Both have the single crystalline wurtzite …

The electrical properties of InN nanowires were investigated in four-point probe
measurements. The dependence of the conductance on the wire diameter allows …

High quality, well-separated, homogeneous sizes and high aspect ratio Si-doped InN
nanowires (NWs) were grown by catalyst-free molecular beam epitaxy (MBE) after …