The single-event transients in MOSFETs due to heavy ion strikes introduce soft errors in sub-
50 nm CMOS VLSI circuits. These transients are easily captured and propagated in high …

In this paper, a physics-based bias-dependent model of single-event transients (SETs) in
double-gate (DG) MOSFET suitable for circuit simulation is presented. The existing …

An analytical model is presented to understand the time response of an inverter to ionizing
particles based on physical equations. The model divides the output voltage transient …

As chip technologies scale down in size, multiple adjacent logic nodes are often affected by
a single high-energy ion strike. The so-called pulse quenching effect, induced by single …

Heavy-ion data from a 130-nm bulk CMOS process shows a counterproductive result in
using a common single-event charge collection mitigation technique. Guard bands, which …

The soft error rate (SER) due to heavy-ion irradiation of a clock tree is investigated in this
paper. A method for clock tree SER prediction is developed, which employs a dedicated soft …

In this paper, we develop a model to simulate the single event transient (SET) phenomena in
LDMOS-SOI devices. 3D simulations and compact model are coupled in order to reproduce …

This paper reports on the supply voltage dependency of single-event transient (SET)
propagation and multinode charge collection phenomena in integrated circuits. We have …

In this paper, heavy-ion-induced single-event transient (SET) pulsewidths measured in a 65-
nm bulk CMOS technology at temperatures ranging from 25° C to 100° C with an …

Single-event transient (SET) distributions and cross-sections are characterized for 16 nm
bulk FinFET inverters with different threshold voltages and driving strengths using the heavy …