The developments in advanced interconnect technology for semiconductor logic devices for
the mitigation of plasma‐induced damage to low‐dielectric‐constant (low‐k) materials …

Porous low-k materials are required as interlayer dielectrics in future technology nodes in
order to compensate for the RC-delay and power consumption increase associated with …

Damage of plasma-enhanced chemical vapor deposited SiOCH films on exposure to typical
plasma etch, plasma ash and wet clean processes are investigated. Dielectrics of k= 3.0⁠ …

This chapter is an overview of plasma processing used for fabrication of interconnect
structures for modern ULSI devices. The chapter contains four parts, including analysis of (1) …

Low dielectric constant (low-k) materials as an interconnecting insulator in integrated circuits
are essential for resistance-capacitance (RC) time delay reduction. Plasma technology is …

Integration of new low-κ interlayer dielectrics (ILD) with current damascene schemes is a
continuing issue in the microelectronics industry. During integration of the ILD, processing …

The chemical bonding structure of porous low-k carbon-doped silicon oxide (SiOC) films (k<
2.4) was engineered using plasma-enhanced chemical vapor deposition and electron-beam …

The increasing sensitivity of porous low dielectric constant materials to process damage
constitutes a major roadblock to their implementation in back-end-of-the-line (BEOL) wiring …

Plasma induced damage on a∼ 68 nm low-k dielectric trench structure was evaluated and
correlated to each plasma processing step using multiple internal reflection infrared …

The degradation of SiOC (H) low-k films upon plasma treatments has been investigated.
Three generations of SiOC (H) low-k dielectrics (k= 3.0, k= 2.6 and k= 2.3) were used. The …