Despite the rapid increase in the number of newly developed processes, area-selective
atomic layer deposition (ALD) of nitrides is largely unexplored. ALD of nitrides at low …

Area-selective atomic layer deposition using small-molecule inhibitors (SMIs) involves vapor-
phase dosing of inhibitor molecules, resulting in an industry-compatible approach. However …

The demand for transistors and memory devices with smaller feature sizes and increasingly
complex architectures furthers the need for advanced thin film patterning techniques. A …

Implementation of vapor/phase dosing of small molecule inhibitors (SMIs) in advanced
atomic layer deposition (ALD) cycles is currently being considered for bottom-up fabrication …

Area‐selective deposition (ASD) receives increasing attention as a bottom‐up approach for
nanoelectronic device fabrication. Uptake of ASD is however limited by defects, which …

The chemical approaches enabling selective atomic layer deposition (ALD) are gaining
growing interest. The selective ALD has unlocked attractive avenues for the development of …

Oxide and nitride thin-films of Ti, Hf, and Si serve numerous applications owing to the
diverse range of their material properties. It is therefore imperative to have proper control …

Area‐selective atomic layer deposition (AS‐ALD) offers tremendous advantages in
comparison with conventional top‐down patterning processes that atomic‐level selective …

Area-selective deposition (ASD) is a promising bottom-up manufacturing solution for
catalysts and nanoelectronic devices. However, industrial applications are limited as highly …

Area-selective atomic layer deposition (AS-ALD) is a highly sought-after strategy for the
fabrication of next-generation electronics. This work reveals how key precursor design …