Quantum dot-based lasers have long been predicted to have interesting properties as well
as performance advantages over more conventional quantum well-based devices. The …

We have grown InP quantum dots with different rates and on substrates with different
orientations. The growth conditions have a major influence on the form of the gain spectrum …

Due to the low density states and high radiative efficiency, quasi-zero-dimensional quantum
dot has already exposited major new advances in both fundamental physics and device …

The unique optical properties of quantum dot semiconductors have brought about significant
new capabilities in light-emitting devices fabricated from these materials. In particular, the …

An overview will be given on the progress of quantum dot laser materials addressing the
telecom C band and their high potential for the application in optical communication …

Recent advances in semiconductor quantum-dot lasers Page 1 CR Physique 4 (2003) 611–619
Semiconductor lasers/Lasers semiconducteurs Recent advances in semiconductor quantum-dot …

980 nm GaInAs/(Al) GaAs quantum dot laser structures with a high internal quantum
efficiency ni of about 90%, and a low internal absorption< 2.5 cm-1 and a threshold current …

We describe the growth, material characterization, and device characterization of InP-GaInP
quantum-dot lasers for operation in the wavelength range 690-750 nm. We show that the …

We describe the initial efforts to use molecular beam epitaxy to grow InAs quantum dots on
GaAs via the Stranski–Krastanov transition and then discuss the initial efforts to use these …

We directly measure the modal gain and spontaneous emission spectra in three quantum
dot structures that are nominally identical except for the level of p doping to ascertain the …