We report fabrication methods, including metal masks and dry etching, and demonstrate
highly ordered vertical gallium arsenide nanowire arrays. The etching process created high …

Vertically aligned, catalyst-free semiconducting nanowires hold great potential for
photovoltaic applications, in which achieving scalable synthesis and optimized optical …

A method is presented of fabricating gallium arsenide (GaAs) nanowire arrays of controlled
diameter and period by reactive ion etching of a GaAs substrate containing an indium …

Semiconductor nanowire-based devices are among the most promising structures used to
meet the current challenges of electronics, optics and photonics. Due to their high surface-to …

Semiconductor nanowire arrays are reproducible and rational platforms for the realization of
high performing designs of light emitting diodes and photovoltaic devices. In this paper we …

Straight, vertically aligned GaAs nanowires were grown on Si (111) substrates coated with
thin GaAs buffer layers. We find that the V/III precursor ratio and growth temperature are …

In this work, we present a systematic study of the optical reflectivity of GaAs nanowire arrays
as a function of nanowire size, morphology, and arrangement on the substrate. To analyze …

Here we investigate the feasibility of silver as seed-particle material to synthesize GaAs
nanowires and show that both crystal phase and growth direction can be controlled by …

We report on the successful growth of strained core-shell GaAs/InGaAs nanowires on Si
(111) substrates by molecular beam epitaxy. The as-grown nanowires have a density in the …

We studied the influence of geometric parameters on the optical absorption of gallium
arsenide (GaAs) nanocone and nanowire arrays via finite difference time domain …