In this paper, a single-event transient model based on the effective space charge for
MOSFETs is proposed. The physical process of deposited and moving charges is analyzed …

The problem that the conventional double-exponential transient current model (DE model)
can overdrive the circuit, which leads to the overestimation of the soft error rate of the logic …

In this study, we propose an improved macro-model of an N-type feedback field-effect
transistor (NFBFET) and compare it with a previous macro-model for circuit simulation. The …

In this paper, we simulate the electrical characteristics of the n-type metal-oxide-
semiconductor (NMOS) transistor in a 65-nm complementary metal-oxide-semiconductor …

As the manufacturing process level of semiconductor devices continues to improve, the
device size gradually decreases, and the devices are affected by the single event effect …

An analytical model is presented to understand the time response of an inverter to ionizing
particles based on physical equations. The model divides the output voltage transient …

With the continuous progress in integrated circuit technology, single-event effect (SEE) has
become a key factor affecting the reliability of aerospace integrated circuits. Simulating fault …

In this article, a novel machine learning regression-based single-event transient (SET)
modeling method is proposed. The proposed method can obtain a reasonable and accurate …

The single-event transients in MOSFETs due to heavy ion strikes introduce soft errors in sub-
50 nm CMOS VLSI circuits. These transients are easily captured and propagated in high …

Three dimensions technology computer aided design (3D TCAD) simulation was used to
study single event transient (SET) in an invert with 90 nm bulk complementary metal oxide …