Electron paramagnetic resonance spectroscopy, secondary-ion mass spectrometry, and
moving space charge field techniques were used to characterize semi-insulating cadmium …

Electron paramagnetic resonance (EPR), photo-EPR, optical absorption, and
photoluminescence measurements have been made on photorefractive vanadium-doped …

Vanadium‐doped CdTe has recently been shown to have a high sensitivity for optical
processing at 1.5 μm but the role of the vanadium dopant has been questioned. We present …

Tin is shown to be a suitable dopant that makes it possible to grow cadmium telluride
crystals with considerably reduced conductivity (semi‐insulating material) and ensures a …

We present a summary of the experimental results, the attempts of interpretation at the
present stage, and the conclusions of coupled investigations on semi-insulating, n-type and …

We present new results on the growth of semi-insulating vanadium-doped cadmium telluride
crystals and their characterization by different optical techniques such as photoinduced …

We present electro-optical characterization (by deep level transient spectroscopy, deep level
optical spectroscopy and photo-induced current transient spectroscopy) on vanadium doped …

A quantitative electron paramagnetic resonance (EPR) study of vanadium-related defects in
semi-insulating and co-doped p-type and n-type bulk CdTe: V shows the V Cd donor to be …

The first study of the photorefractive properties of doped CdTe has demonstrated high
sensitivity for optical processing applications. Of the binary II‐VI and III‐V semiconductors …

The ac field technique leading to the enhancement of the photorefractive effect is applied to
vanadium-doped cadmium telluride. Net photorefractive gain is obtained for the three …