Constraints of the single layer quantum dot (QD) led to the investigation of alternative
heterostructures for the next generation high performance optoelectronic devices. In this …

The influence of digital alloy capping technique on the strain-coupled bilayer InAs quantum
dots (QDs) has been presented. Multiple capping layers of different composition have been …

Here, we propose a different approach for growing strain-coupled In 0.5 Ga 0.5 As quantum
dot infrared photodetectors (QDIPs) with varying dot layer periodicity. Strain calculation is …

Multiple stacking of sub-monolayer (SML) quantum dot (QD) heterostructure exhibits high
optical quality and is seen in devices like lasers diodes, photodetectors, etc. In this study, we …

Strain coupled multi-layer quantum dot (QD) structures are limited due to their non-uniform
dot size distribution, as-grown defects and dislocations. Even with these limitations, they are …

The size and shape of self-assembled quantum dots (QDs) in the top layer of a strain-
coupled multilayer Stranski-Krastanov (SK) type QD heterostructure is decided by the effect …

Strain-driven influences on the structural and optoelectronic properties of self-assembled
InAs/GaAs multilayer quantum dot (MQD) heterostructures prompted our research into the …

Morphological and optical properties of MBE-grown single and bilayer InAs/GaAs quantum-
dot heterostructure with comparatively larger monolayer coverage (∼ 3.3 ML) are …

Self-assembled InAs/GaAs multilayer quantum dots (MQDs) have been widely investigated
for their potential application in optoelectronic applications such as lasers and photovoltaic …

Abstract Strain-coupled multilayer Quantum Dot (QD) structures draw a great attention these
days because of their superior optical and device performance. However, these coupled …