Experimental and theoretical studies of band gap alignment in GaAs1− xBix/GaAs quantum wells
R Kudrawiec, J Kopaczek, MP Polak… - Journal of Applied …, 2014 - pubs.aip.org
Band gap alignment in GaAs 1− x Bi x/GaAs quantum wells (QWs) was studied
experimentally by photoreflectance (PR) and theoretically, ab initio, within the density …
experimentally by photoreflectance (PR) and theoretically, ab initio, within the density …
Realization and modeling of a pseudomorphic (GaAs1−xSbx–InyGa1−yAs)/GaAs bilayer‐quantum well
M Peter, K Winkler, M Maier, N Herres, J Wagner… - Applied physics …, 1995 - pubs.aip.org
We have realized a (GaAs1− x Sb x‐In y Ga 1− y As)/GaAs bilayer‐quantum well (BQW),
which consists of two adjacent pseudomorphic layers of GaAs1− x Sb x and In y Ga1− y As …
which consists of two adjacent pseudomorphic layers of GaAs1− x Sb x and In y Ga1− y As …
Bandgap and optical absorption edge of GaAs1− xBix alloys with 0< x< 17.8%
M Masnadi-Shirazi, RB Lewis… - Journal of Applied …, 2014 - pubs.aip.org
The compositional dependence of the fundamental bandgap of pseudomorphic GaAs 1− x
Bi x layers on GaAs substrates is studied at room temperature by optical transmission and …
Bi x layers on GaAs substrates is studied at room temperature by optical transmission and …
Theoretical study of optoelectronic properties of GaAs1− xBix alloys using valence band anticrossing model
Abstract The (12× 12) and (14× 14) valence band anticrossing (V-BAC) models were
applied to calculate the electronic band structure of GaAs 1− x Bi x dilute alloys along Δ-, Λ …
applied to calculate the electronic band structure of GaAs 1− x Bi x dilute alloys along Δ-, Λ …
Determination of type-I band offsets in GaBixAs1–x quantum wells using polarisation-resolved photovoltage spectroscopy and 12-band kp calculations
CA Broderick, PE Harnedy, P Ludewig… - Semiconductor …, 2015 - iopscience.iop.org
Using photovoltage (PV) spectroscopy we analyse the electronic structure of a series of
GaBi x As ${} _ {1-x} $/(Al) GaAs dilute bismide quantum well (QW) laser structures. The use …
GaBi x As ${} _ {1-x} $/(Al) GaAs dilute bismide quantum well (QW) laser structures. The use …
Rapid thermal annealing effect on GaAsBi/GaAs single quantum wells grown by molecular beam epitaxy
The effect of rapid thermal annealing on the optical and structural properties of GaAsBi/GaAs
quantum wells (QWs) is investigated. The photoluminescence (PL) spectra of the samples …
quantum wells (QWs) is investigated. The photoluminescence (PL) spectra of the samples …
Bismuth concentration inhomogeneity in GaAsBi bulk and quantum well structures
AR Mohmad, F Bastiman, CJ Hunter… - Semiconductor …, 2015 - iopscience.iop.org
The optical and structural properties of GaAsBi bulk and quantum well (QW) samples grown
under various conditions were studied by photoluminescence (PL), high resolution x-ray …
under various conditions were studied by photoluminescence (PL), high resolution x-ray …
Type I GaSb1-xBix/GaSb quantum wells dedicated for mid infrared laser applications: Photoreflectance studies of bandgap alignment
R Kudrawiec, J Kopaczek, O Delorme… - Journal of Applied …, 2019 - pubs.aip.org
To determine the band alignment at the GaSb 1-x Bi x/GaSb interface, a set of GaSb 1-x Bi
x/GaSb quantum wells (QWs) of various widths (7, 11, and 15 nm) and contents (Bi≤ 12%) …
x/GaSb quantum wells (QWs) of various widths (7, 11, and 15 nm) and contents (Bi≤ 12%) …
Characterization of band gap in GaAsSb/GaAs heterojunction and band alignment in GaAsSb/GaAs multiple quantum wells
Photoreflectance (PR) and photoluminescence (PL) spectra are used to investigate the band
alignment of GaAsSb/GaAs multiple quantum wells (MQWs). PR and PL spectra are …
alignment of GaAsSb/GaAs multiple quantum wells (MQWs). PR and PL spectra are …
Composition dependence of band alignments in GaxIn1− xAsySb1− y heterojunctions lattice matched to GaSb and InAs
K Shim - Journal of Applied Physics, 2013 - pubs.aip.org
A theoretical model utilizing a universal tight binding method and a correlated function
expansion technique is presented to calculate the valence band maximum (VBM) and the …
expansion technique is presented to calculate the valence band maximum (VBM) and the …