The fabrication of interconnects in integrated circuits requires the use of porous low
dielectric constant materials that are unfortunately very sensitive to plasma processes. In this …

The ongoing transition to lower dimension devices requires the replacement of Si O 2 by a
lower-k dielectric insulator. Such materials are porous, introducing the need for sealing …

The promising low-k property of polymers is offset by the ease of penetration of their
inherently porous internal matrix during processing. In this study, plasma chemistry is …

We have studied the effects of plasma treatments on the electrical, chemical and mechanical
properties of fluorinated-poly-arylene-ether (FLARE) and divinylsiloxane-benzocyclobutane …

There has been much interest recently in porous oxycarbosilane (POCS)-based materials as
the ultra-low k dielectric (ULK) in back-end-of-line (BEOL) applications due to their superior …

To achieve shorter RC-delay times in integrated circuits low-dielectric-constant (low-k)
materials are being investigated for interconnect wiring. Porous silicon dioxide (PS) is one …

Integration of porous low dielectric constant materials constitutes a major roadblock in the
reliable manufacturing of back end of the line (BEOL) wiring for the advanced technology …

Low dielectric constant materials (low-k) are used as interlevel dielectrics in integrated
circuits. This paper concerns the etching process of these materials in high density plasma …

This study is dedicated to the etching of a low-k material using the late porogen removal
approach. In this approach, the porogen is removed by thermal annealing or UV curing after …

The etch characteristics of thick (> 20 μm) polynorbornene films used as insulators in chip-to-
board interconnection structures were studied in O 2/CHF 3-based plasmas. Two …