A method for etching a stack with an Ru containing layer disposed below a hardmask and
above a magnetic tunnel junction (MTJ) stack with pinned layer is provided. The hardmask is …

A hard mask stack for etching a magnetic tunneling junction (MTJ) structure is described. An
electrode layer is deposited on a stack of MTJ layers on a bottom electrode. A photoresist …

A a magnetic random access memory (MRAM) device includes a cap layer formed over a
magnetic tunnel junction (MTJ) stack layer, an etch stop layer formed over the first cap layer …

A multi-step etch technique for fabricating a magnetic tunnel junction (MTJ) apparatus
includes forming a first conductive hard mask on a first electrode of the MTJ apparatus for …

(57) ABSTRACT A method for fabricating an MRAM bit that includes depos iting a spacer
layer that protects the tunneling barrier layer during processing is disclosed. The deposited …

Chemical modification of non-volatile magnetic random access memory (MRAM) magnetic
tunnel junctions (MTJs) for film stack etching is described. In an example, a method of …

A magnetic tunnel junction (MTJ) device is formed by a process that includes forming a
trench in a substrate and depositing an MTJ structure within the trench. The MTJ structure …

A method is presented for forming a semiconductor structure. The method includes
depositing a barrier layer, such as a tantalum nitride (TaN) layer, over a dielectric …

(57) ABSTRACT A method of fabricating a magnetic tunnel junction (MTJ) device is
provided. A patterned hard mask is oxidized to form a Surface oxide thereon. An MTJ Stack …

A method includes patterning a plurality of magnetic tunnel junction (MTJ) layers to form a
MTJ stack, and forming a first dielectric cap layer over a top surface and on a sidewall of the …