Micro-Raman imaging measurements of n-type 4 H-Si C crystals with graded donor
concentration were carried out, and spatial distributions of the free carrier concentration …

The free carrier concentration of n-4 H-Si C was deduced by Raman spectroscopy using LO
phonon plasmon coupled (LOPC) modes as a monitor band. We could determine the free …

Raman microspectroscopy has been applied to the determination of free carrier distributions
in modulation-doped 6H-SiC crystals in order to examine the process of the crystal growth …

For n-type 4H-SiC crystals with carrier concentrations between 2× 10 17 and 2.5× 10 20 cm−
3, Fano interference of the folded transverse acoustic (FTA) doublet modes was observed …

Raman spectroscopy was applied to different-impurities-doped 6H-SiC crystals. It had been
found that the first-order Raman spectra of N-, Al-and B-doped 6H-SiC were shifted to higher …

Raman spectra of three bulk 4H-SiC wafers with different free carrier concentration were
measured at temperature from 80 K to 873 K. As temperature increases, Raman peaks of …

Raman spectra of Al-and N-doped 6H-SiC crystal samples with different doping levels were
measured. The first-order Raman spectra of the samples were shifted to higher frequency …

LO‐phonon–plasmon–coupled modes in n‐type 4H–and 6H–SiC single crystals with free‐
carrier concentrations of 1016–1018 cm− 3 have been measured by Raman scattering at …

Raman scattering spectra of 4H-SiC with different carrier concentrations were measured
from 90 K to 660 K. By using the improved empirical formula and the energy-time uncertainty …

A novel characterization method for the nitrogen doping concentration in heavily nitrogen-
doped (more than 1× 10 19 cm− 3) 4H-SiC crystals using Raman scattering microscopy is …