Comparison of gallium and arsenic precursors for GaAs carbon doping by organometallic vapor phase epitaxy using CCl4

WS Hobson, SJ Pearton, DM Kozuch… - Applied Physics …, 1992 - pubs.aip.org
The carbon doping properties of GaAs grown by low pressure (30 Torr) organometallic
vapor phase epitaxy at 520–700° C with CCl4 as the dopant precursor were compared for …
被引用次数：51 相关文章 所有 4 个版本

A comparative study of selective carbon doping in MOCVD GaAs using trimethylarsenic and arsine

HJ Moon, TG Stoebe, BK Chadwick - Journal of electronic materials, 1990 - Springer
Carbon incorporation in GaAs epitaxial layers grown by low pressure metalorganic chemical
vapor deposition (MOCVD), using trimethylgallium (TMGa) as the gallium source and …
被引用次数：13 相关文章 所有 7 个版本

Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy

TF Kuech, MA Tischler, PJ Wang, G Scilla… - Applied physics …, 1988 - pubs.aip.org
The controlled incorporation of carbon has been demonstrated for the metalorganic vapor
phase epitaxy of GaAs. Carbon levels between 1016 and 1019 cm− 3 can be achieved …
被引用次数：207 相关文章 所有 7 个版本

Carbon acceptor incorporation in GaAs grown by metalorganic chemical vapor deposition: Arsine versus tertiarybutylarsine

SP Watkins, G Haacke - Applied physics letters, 1991 - pubs.aip.org
Undoped p‐type GaAs epilayers were grown by low‐pressure metalorganic chemical vapor
deposition (MOCVD) at 650° C and 76 Torr using either arsine or tertiarybutylarsine (TBA) …
被引用次数：51 相关文章 所有 6 个版本

Reduction of background doping in metalorganic vapor phase epitaxy of GaAs using triethylgallium at low reactor pressures

TF Kuech, R Potemski - Applied physics letters, 1985 - pubs.aip.org
The mechanism of background impurity incorporation in the metalorganic vapor phase
epitaxy of GaAs using triethylgallium and arsine was investigated over a wide range of …
被引用次数：77 相关文章 所有 8 个版本

Carbon incorporation during growth of GaAs by TEGa‐AsH3 base low‐pressure metalorganic chemical vapor deposition

HD Chen, CY Chang, KC Lin, SH Chan… - Journal of applied …, 1993 - pubs.aip.org
Heavily carbon‐doped GaAs (1× 1018∼ 1× 1020 cm− 3) grown by low‐pressure
metalorganic chemical vapor deposition using triethylgallium and arsine as sources and …
被引用次数：15 相关文章 所有 7 个版本

Heavy carbon doping in low-pressure metalorganic vapor phase epitaxy of GaAs using trimethylarsenic—a comparison between the carrier gases N2 and H2

H Hardtdegen, C Ungermanns, K Wirtz, D Guggi… - Journal of crystal …, 1994 - Elsevier
The carbon doping behavior of trimethylarsenic (TMAs) in low-pressure metalorganic vapor
phase epitaxy (LP-MOVPE) of GaAs was studied in the temperature range of 550 to 700° C …
被引用次数：25 相关文章 所有 5 个版本
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Carbon incorporation in metal-organic vapor phase epitaxy grown gaas from CHxl4-x, HI, and l2

NI Buchan, TF Kuech, G Scilla, F Cardone… - Journal of electronic …, 1990 - Springer
The incorporation of carbon into GaAs grown by metal-organic vapor phase epitaxy has
been studied through the addition of CH 2 I 2, CH 3 I, HI and I 2 to the growth ambient. The …
被引用次数：25 相关文章 所有 9 个版本

Carbon-doped GaAs grown by metalorganic vapor phase epitaxy using TMAs and TEG

T Kobayashi, N Inoue - Journal of crystal growth, 1990 - Elsevier
Heavily carbon-doped GaAs epi-layers are successfully obtained in metalorganic vapor
phase epitaxy using trimethylarsine ((CH 3) 3 As: TMAs) and triethylgallium ((C 2 H 5) 3 Ga …
被引用次数：21 相关文章 所有 4 个版本

Very high carbon incorporation in metalorganic vapor phase epitaxy of heavily doped p‐type GaAs

MC Hanna, ZH Lu, A Majerfeld - Applied physics letters, 1991 - pubs.aip.org
Very high C incorporation (> lo*'cm-3) in GaAs was achieved by atmospheric pressure
metalorganic vapor phase epitaxy (AP-MGVPE) using CClb as a dopan; gas. Hole densities …
被引用次数：152 相关文章 所有 7 个版本