Recent advances in reactive ion etching and applications of high-aspect-ratio microfabrication

M Huff - Micromachines, 2021 - mdpi.com
This paper reviews the recent advances in reaction-ion etching (RIE) for application in high-
aspect-ratio microfabrication. High-aspect-ratio etching of materials used in micro-and …

Reactive ion etching for microelectrical mechanical system fabrication

IW Rangelow, H Löschner - Journal of Vacuum Science & Technology …, 1995 - pubs.aip.org
The suitability of reactive ion etching for the fabrication of microelectro mechanical systems
(MEMS) has been evaluated by characterizing the change of lateral dimensions versus …

A survey on the reactive ion etching of silicon in microtechnology

H Jansen, H Gardeniers, M de Boer… - Journal of …, 1996 - iopscience.iop.org
This article is a brief review of dry etching as applied to pattern transfer, primarily in silicon
technology. It focuses on concepts and topics for etching materials of interest in …

Reduced etch lag and high aspect ratios by deep reactive ion etching (DRIE)

MS Gerlt, NF Läubli, M Manser, BJ Nelson, J Dual - Micromachines, 2021 - mdpi.com
Deep reactive ion etching (DRIE) with the Bosch process is one of the key procedures used
to manufacture micron-sized structures for MEMS and microfluidic applications in silicon …

Advanced etching of silicon based on deep reactive ion etching for silicon high aspect ratio microstructures and three-dimensional micro-and nanostructures

F Marty, L Rousseau, B Saadany, B Mercier… - Microelectronics …, 2005 - Elsevier
Different processes involving an inductively coupled plasma reactor are presented either for
deep reactive ion etching or for isotropic etching of silicon. On one hand, high aspect ratio …

Advanced deep reactive ion etching: a versatile tool for microelectromechanical systems

PA Clerc, L Dellmann, F Gretillat… - Journal of …, 1998 - iopscience.iop.org
Advanced deep reactive ion etching (ADRIE) is a new tool for the fabrication of bulk
micromachined devices. Different sensors and actuators which use ADRIE alone or …

Ultra deep reactive ion etching of high aspect-ratio and thick silicon using a ramped-parameter process

Y Tang, A Sandoughsaz, KJ Owen… - Journal of …, 2018 - ieeexplore.ieee.org
This paper reports an advanced deep reactive ion etching (DRIE) process for realizing ultra-
deep (500-μm) and ultra-high aspect-ratio (UHAR) silicon structures (AR 40 for 1-mm …

Deep reactive ion etching of silicon carbide

S Tanaka, K Rajanna, T Abe, M Esashi - Journal of Vacuum Science & …, 2001 - pubs.aip.org
In this article, we describe more than 100-μm-deep reactive ion etching (RIE) of silicon
carbide (SiC) in oxygen-added sulfur hexafluoride (SF 6) plasma. We used a homemade …

Silicon micromachining using a high-density plasma source

SA McAuley, H Ashraf, L Atabo… - Journal of physics d …, 2001 - iopscience.iop.org
Dry etching of Si is critical in satisfying the demands of the micromachining industry. The
micro-electro-mechanical systems (MEMS) community requires etches capable of high …

Deep reactive ion etching

F Laermer, S Franssila, L Sainiemi, K Kolari - Handbook of silicon based …, 2020 - Elsevier
This chapter discusses reactive ion etching (RIE) and deep RIE (DRIE) on wafers detailing
the various equipment and reactor requirements for different applications. The Bosch …