III-nitride nanowires (NWs) were grown on Si (111) without catalyst by plasma-assisted
molecular-beam epitaxy under N-rich conditions. The influence of doping on the morphology …

In this paper, we report on the catalyst-free growth and the optoelectronic properties of GaN
and InN nanowires (NWs) grown on Si (111) substrates by nitrogen RF plasma source …

Indium nitride nanowires (NWs) grown by a catalyst-free, vapor-solid method are shown to
be high-purity, single-crystal hexagonal wurtzite and intrinsic n type with uniform diameters …

p-Type doping represents a key step towards III-nitride (InN, GaN, AlN) optoelectronic
devices. In the past, tremendous efforts have been devoted to obtaining high quality p-type …

High quality, well-separated, homogeneous sizes and high aspect ratio Si-doped InN
nanowires (NWs) were grown by catalyst-free molecular beam epitaxy (MBE) after …

Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been
intensively studied in the past decade. Unique to this material system is that its energy …

The structural and optical properties of axial GaN/InGaN/GaN nanowire heterostructures
with high InN molar fractions grown by molecular beam epitaxy have been studied at the …

With increasing interest in GaN based devices, the control and evaluation of doping are
becoming more and more important. We have studied the structural and electrical properties …

Photoluminescence excitation (PLE) spectra have been measured for a set of self-
assembled InN nanowires (NWs) and a high-crystalline quality InN layer grown by molecular …

The authors report on the growth and characterization of high quality InN nanowires on Si
(111) by radio frequency plasma-assisted molecular beam epitaxy. InN nanowires with …