The reactions induced in a vacuum furnace (5× 10− 7 Torr) between an electron-beam-
evaporated Ni film a few hundred nm thick and a (001)-oriented (ie Si-face-oriented) single …

We have studied the interface formation of Ni overlayers on cubic SiC (100) by
photoemission spectroscopy with synchrotron radiation in the energy range h ν= 40–140 eV …

Interface reaction between Ni thin film and bulk SiC during heat treatment was investigated
by MeV ion backscattering spectrometry using resonance scattering of helium‐carbon, x‐ray …

Thin sputtered nickel films grown on SiC were annealed in an Ar/4 vol% H2 atmosphere at
temperatures between 550 to 1450° C for various times. The reactivity and the reaction …

Ion backscattering in conjunction with channeling and blocking has been used to study the
Ni‐SiC (001) system after Ni deposition at room temperature and after annealing up to a …

Investigation of the relatively low temperature reaction between Ni nanolayer film and 4H–
SiC substrate provides valuable insights into studies of the fundamental properties of SiC …

Detailed characterization using x-ray diffractometry, scanning electron microscopy,
transmission electron microscopy, x-ray photoelectron spectroscopy, and Auger infrared and …

Ultrathin films of nickel deposited onto (100) Si substrates were found to form kinetically
constrained multilayered interface structures characterized by structural and compositional …

The present study deals with mechanisms of the reaction process of fabricated thin film
Ni/SiC contacts by means of XRD, XPS and Raman spectroscopy. After annealing SiC …

Interfacial reactions of nickel thin films on BF+ 2‐implanted (001) Si annealed at 200–900° C
for various periods of time have been studied by both cross‐sectional and plan‐view …