An investigation of the growth of heteroepitaxial InAs by MBE is reported. The surface
morphology and electrical properties are shown to be critically dependent on growth …

The nature of the interface region between semiconducting heteroepitaxial layers and their
substrates has been experimentally studied using Auger electron spectroscopy and energy …

A study of the electrical properties of InAs heteroepitaxial layers grown on (100) GaAs and
their dependence upon growth parameters has been undertaken. InAs films 1 mu m thick …

The growth by molecular beam epitaxy of InSb layers (0.5< t< 10 μm) on undoped GaAs
(100) substrates has been undertaken. In situ reflection high energy electron diffraction and …

The growth of bulk heteroepitaxial layers of InAs on GaAs substrates by atmospheric
pressure MOVPE is described. Tertiarybutylarsine [TBAs] and trimethylindium [TMIn] were …

Halogen transport and vapor growth of InAs were first reported by Effer et al.(1, 2). Epitaxial
deposition of pure InAs as well as GaAs-InAs mixed crystals on low resistivity GaAs …

Thin heteroepitaxial layers of InAs have been grown on (100) GaAs substrates and buffer
layers by molecular beam deposition in a UHV chamber. Smooth epitaxial layers as …

Heteroepitaxial films of InAs on GaAs substrates, grown by the decomposition of
triethylindium and arsine, have been characterized. Films with mobilities of up to 10,000 …

The growth of bulk heteroepitaxial layers of InAs on GaAs substrates (and in some cases on
InP substrates) by atmospheric pressure MOVPE is described. The indium source used was …

Abstract 0.5–2.0 μ heteroepitaxial InAs layers were deposited onto (100) GaAs substrates by
molecular beam deposition. Epitaxial growth has been maintained over the temperature …