The chemical vapor deposition (CVD) techniques used to grow III/V semiconductors films,
such as metalorganic vapor phase epitaxy (MOVPE), hydride VPE, chemical beam epitaxy …

A major limitation to the continuing development of organometallic vapor phase epitaxy
(OMVPE) for the growth of III/V semiconductor materials is the hazard posed by the hydride …

Until recently, the choice of group V source molecules for organometallic vapor phase
epitaxy (OMVPE) of III/V semiconductors has been simple: only AsH 3 and PH 3 produced …

During the development of organometallic vapor phase epitaxy (OMVPE) for the growth of
III/V semiconductor materials, the choice of group III and group V source molecules has …

Metal-organic vapour phase epitaxy/chemical vapour deposition (MOVPE/MOCVD) has
emerged recently as the method of choice for large scale preparation of a variety of low …

The use of AsH 3 in the organometallic vapor phase epitaxial (OMVPE) growth of GaAs and
other As containing III/V semiconductors has a number of disadvantages, including toxicity …

The alternative group V sources trisdimethylamino-arsine (TDMAAs) and trisdimethylamino-
phosphine (TDMAP) have been used as substitutes for the highly toxic group V hydrides …

New group III hydride precursors have been synthesized in high yield and their purities have
been measured by atomic absorption spectroscopy analysis, ion chromatography and metal …

Metal‐organic chemical vapor deposition (MOCVD) is a suitable technique for the
preparation of III–V epitaxial layers which are used in the fabrication of microelectronic and …

Several hazardous gases and liquids are used during the epitaxial growth of compound
semiconductor materials by metalorganic chemical vapor deposition (MOCVD). The purpose …