2.7 A wideband 28GHz power amplifier supporting 8× 100MHz carrier aggregation for 5G in 40nm CMOS
To meet rising demand, broadband-cellular-data providers are racing to deploy fifth
generation (5G) mm-wave technology, eg, rollout of some 28GHz-band services is intended …
generation (5G) mm-wave technology, eg, rollout of some 28GHz-band services is intended …
A 26 dBm 39 GHz Power Amplifier with 26.6% PAE for 5G Applications in 28nm bulk CMOS
Continued demand for 5G cellular connectivity in mobile handheld devices, where antenna
real-estate is at a premium, necessitates high output power from individual transmitter …
real-estate is at a premium, necessitates high output power from individual transmitter …
20.6 A 28GHz efficient linear power amplifier for 5G phased arrays in 28nm bulk CMOS
Rapidly growing demand for broadband-cellular-data traffic is driving fifth-generation (5G)
wireless standardization towards the deployment of gigabit-per-second mm-Wave …
wireless standardization towards the deployment of gigabit-per-second mm-Wave …
A 26-42 GHz broadband, back-off efficient and vswr tolerant CMOS power amplifier architecture for 5G applications
CR Chappidi, K Sengupta - 2019 Symposium on VLSI Circuits, 2019 - ieeexplore.ieee.org
Future mm-Wave transmitter front-ends will need to operate in an electromagnetically
complex environment that are resistant to near-field antenna perturbations (VSWR events) …
complex environment that are resistant to near-field antenna perturbations (VSWR events) …
A highly efficient and linear power amplifier for 28-GHz 5G phased array radios in 28-nm CMOS
This paper presents the first linear bulk CMOS power amplifier (PA) targeting low-power fifth-
generation (5G) mobile user equipment integrated phased array transceivers. The output …
generation (5G) mobile user equipment integrated phased array transceivers. The output …
A 28GHz 41%-PAE linear CMOS power amplifier using a transformer-based AM-PM distortion-correction technique for 5G phased arrays
To fulfill the insatiable demand for high data-rates, the millimeter-wave (mmW) 5G
communication standard will extensively use high-order complex-modulation schemes (eg …
communication standard will extensively use high-order complex-modulation schemes (eg …
24.7 A 15dBm 12.8%-PAE compact D-band power amplifier with two-way power combining in 16nm FinFET CMOS
B Philippe, P Reynaert - 2020 IEEE International Solid-State …, 2020 - ieeexplore.ieee.org
The drive for higher data-rates has led to the allocation of the spectrum above 100GHz for D-
band communication. A high level of integration in a nm-CMOS technology is necessary to …
band communication. A high level of integration in a nm-CMOS technology is necessary to …
High-power generation for mm-wave 5G power amplifiers in deep submicrometer planar and FinFET bulk CMOS
A review is presented of the key techniques for high-power, high-efficiency millimeter-Wave
(mm-Wave) 5G power amplifier (PA) design in deep submicrometer planar and FinFET bulk …
(mm-Wave) 5G power amplifier (PA) design in deep submicrometer planar and FinFET bulk …
A 25–35 GHz neutralized continuous class-F CMOS power amplifier for 5G mobile communications achieving 26% modulation PAE at 1.5 Gb/s and 46.4% peak PAE
This paper presents a high-efficiency neutralized continuous class-F (CCF) CMOS power
amplifier (PA) design technique for millimeter-wave (mmW) 5G mobile communications. A …
amplifier (PA) design technique for millimeter-wave (mmW) 5G mobile communications. A …
A 29-to-57GHz AM-PM compensated class-AB power amplifier for 5G phased arrays in 0.9 V 28nm bulk CMOS
M Vigilante, P Reynaert - 2017 IEEE Radio Frequency …, 2017 - ieeexplore.ieee.org
This paper presents a 29-to-57GHz (65% BW) AM-PM compensated class-AB power
amplifier tailored for 5G phased arrays. Designed in 0.9 V 28nm CMOS without RF thick top …
amplifier tailored for 5G phased arrays. Designed in 0.9 V 28nm CMOS without RF thick top …