Assessing the nature of the distribution of localised states in bulk GaAsBi
A comprehensive assessment of the nature of the distribution of sub band-gap energy states
in bulk GaAsBi is presented using power and temperature dependent photoluminescence …
in bulk GaAsBi is presented using power and temperature dependent photoluminescence …
Reduction of defect density by rapid thermal annealing in GaAsBi studied by time-resolved photoluminescence
S Mazzucato, P Boonpeng, H Carrère… - Semiconductor …, 2013 - iopscience.iop.org
Time-resolved photoluminescence was performed on as-grown and annealed bulk GaAsBi
samples. Rapid thermal annealing was carried out at a temperature of 750 C. With …
samples. Rapid thermal annealing was carried out at a temperature of 750 C. With …
Luminescence dynamics in ga (asbi)
S Imhof, C Wagner, A Thränhardt, A Chernikov… - Applied Physics …, 2011 - pubs.aip.org
The temporal evolution of the spectrally resolved luminescence is measured for a Ga (AsBi)
sample at low temperatures. The results are analyzed with the help of kinetic Monte Carlo …
sample at low temperatures. The results are analyzed with the help of kinetic Monte Carlo …
Disorder and the Urbach edge in dilute bismide GaAsBi
C Gogineni, NA Riordan, SR Johnson, X Lu… - Applied Physics …, 2013 - pubs.aip.org
The characteristic emission from tail states below the bandgap of GaAsBi/GaAs quantum
wells is studied using photoluminescence spectroscopy over a 10–300 K temperature range …
wells is studied using photoluminescence spectroscopy over a 10–300 K temperature range …
Variation of lattice constant and cluster formation in GaAsBi
We investigate the structural properties of GaAsBi layers grown by molecular beam epitaxy
on GaAs at substrate temperatures between 220–315 C. Irrespective of the growth …
on GaAs at substrate temperatures between 220–315 C. Irrespective of the growth …
Deep-level defects in n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature and their influence on optical properties
Ł Gelczuk, J Kopaczek, TBO Rockett, RD Richards… - Scientific Reports, 2017 - nature.com
Deep-level defects in n-type GaAs1− x Bi x having 0≤ x≤ 0.023 grown on GaAs by
molecular beam epitaxy at substrate temperature of 378° C have been injvestigated by deep …
molecular beam epitaxy at substrate temperature of 378° C have been injvestigated by deep …
Evidence of two disorder scales in Ga (AsBi)
Temperature‐dependent photoluminescence in a Ga (AsBi) structure is modelled in an
excitonic hopping model and compared to experiment. It is shown that theory and …
excitonic hopping model and compared to experiment. It is shown that theory and …
Analysis of GaAsBi growth regimes in high resolution with respect to As/Ga ratio using stationary MBE growth
J Puustinen, J Hilska, M Guina - Journal of Crystal Growth, 2019 - Elsevier
The control of Bi incorporation and material properties in III-V-Bi alloys has proved
challenging due to their high sensitivity to the epitaxial growth parameters. Here, we present …
challenging due to their high sensitivity to the epitaxial growth parameters. Here, we present …
Analysis of Bi distribution in epitaxial GaAsBi by aberration-corrected HAADF-STEM
Abstract The Bi content in GaAs/GaAs 1− x Bi x/GaAs heterostructures grown by molecular
beam epitaxy at a substrate temperature close to 340° C is investigated by aberration …
beam epitaxy at a substrate temperature close to 340° C is investigated by aberration …
Thermal quenching of photoluminescence in Ga (AsBi)
MK Shakfa, M Wiemer, P Ludewig, K Jandieri… - Journal of Applied …, 2015 - pubs.aip.org
We report on a comparative experimental and theoretical study of the thermal quenching of
the photoluminescence (PL) intensity in Ga (AsBi)/GaAs heterostructures. An anomalous …
the photoluminescence (PL) intensity in Ga (AsBi)/GaAs heterostructures. An anomalous …