Gallium nitride (GaN), a wide-bandgap III–V semiconductor material with a bandgap
wavelength λ_g= 366 nm (for Wurtzite GaN) and transparency window covering the visible …

This doctoral dissertation focuses on fabrication processes for integrated photonic devices
based on III-V semiconductors. This work covers a range of III-V materials and a variety of …

Producing highly efficient GaN-based optoelectronic devices has been a challenge for a
long time due to the large lattice mismatch between III-nitride materials and the most …

The waveguide properties are reported for wide bandgap gallium nitride (GaN) structures
grown by metal organic vapor phase epitaxy on sapphire using a AlN/GaN short period …

A complete analysis of GaN-based structures with very promising characteristics for future
optical waveguide devices, such as modulators, is presented. First the material growth was …

In this paper, we report the fabrication of low loss beta-phase gallium oxide (β-Ga 2 O 3)
optical waveguides and the propagation loss analysis of the waveguides in the ultraviolet …

Erbium-doped GaN (GaN: Er) epilayers were synthesized by metal organic chemical vapor
deposition. GaN: Er waveguides were fabricated based on four different GaN: Er layer …

The demand for heterojunction materials is on the increase due to the great achievements of
modern nanotechnology that has stimulated the enormous research interest for investigating …

Refractive indices of AlxGa1xN with different Al concentrations have been measured in
infrared wavelength regions. Single-mode ridged optical waveguide devices using …

Freestanding GaN waveguides were fabricated on a silicon substrate by a combination of Cl
2 plasma reactive ion etching and XeF 2 gas selective etching. The freestanding GaN …