With respect to semiconductor industry, Complementary metal oxide semiconductor is
considered to be successful because of integration in Integrated Circuits (ICs). As transistor …

With scaling MOSFET into sub 50 nm node there is a marked increase in the Drain induced
barrier lowering, channel length modulation, gate leakage and increase in sub threshold …

This works shows the effect of different dielectric material which are used in gate dielectric
material in metal oxide semiconductor field effect transistor (MOSFET). Dielectric material …

In this paper, a new low voltage MOSFET (LV MOSFET) and high voltage dual-gate
MOSFET (HV DG MOSFET) have been proposed with concept of integration based on …

The design of CMOS circuits using nanoscale MOSFET has become very difficult nowadays
as device modeling faces new challenges such as short channel effects and mobility …

The scaling of simple gate transistors requires the scaling and transistor elements like
source/drain junction became difficult to scale further after a limit due to adverse effect of …

The VLSI industry has grown a lot for several decades. The Packing density of integrated
circuits has been increased without compromising the functionality. Scaling of …

An analytical model based on physics is used to describe the potential distribution,
horizontal electric field, and drain current of Two Gate Oxide with no junction MOSFET (TOX …

For the semiconductor industry, Complementary metal oxide semiconductor is contemplated
to be outstanding because of synthesis in Integrated Circuits (ICs). As transistor size is …

Double gate MOSFET is one of the most promising and leading contender for Nano regime
devices. In this paper an n-channel symmetric Double-Gate MOSFET using high-k (TiO2) …