To explore the origin of low conversion efficiency of GaAsN solar cells, the effects from a key
deep level (E1) at about 0.3–0.4 eV below the conduction band and interface states …

The double carrier pulse deep level transient spectroscopy (DLTS) technique is used to
characterize recombination centers in p-type GaAsN grown by chemical beam epitaxy. The …

A GaAsN solar cell is fabricated by using the chemical beam epitaxy. The properties of the
external quantum efficiency and short circuit current density are studied by comparing with …

The reduction of surface recombination in GaAs solar cells is known to be a major concern
for photovoltaic cells designers. A common technique used to reduce this effect is to cover …

Current transport mechanisms were investigated in a GaAsN homojunction solar cell (HJSC)
grown by chemical beam epitaxy. At each temperature of measurement, the current-voltage …

InGaAs and GaNAs were selected as components of a multiple quantum well (MQW) with a
free-barrier conduction band (FB-CB) in which the quantum confinement for electrons was …

The majority and minority carrier traps in GaAsN grown by chemical beam epitaxy (CBE)
and their relationships with the electrical properties of the materials and solar cells are …

The reduction of residual acceptors in GaAsN films and the improvement of GaAsN crystal
quality evidenced by hole mobility and PL intensity were reported. Si doping using a SiH 4 …

The device structures of GaInNAsSb/GaAs based heteroj unction solar cells were studied.
We fabricated a single-heterostructure (SH) and two double-heterostructures (DH) to …

We have developed a low band gap tandem (two-junction) solar cell lattice-matched to InP,
which is designed to work under a InGaP/GaAs tandem in a four-junction configuration. For …