The etch mechanism of porous SiOCH-based low-k films by F atoms is studied. Five types of
ultra-low-k (ULK) SiOCH films with k-values from 1.8 to 2.5 are exposed to F atoms in the far …

The interaction of F atoms with porous SiOCH low-k films at a temperature of~ 14 C is
studied both experimentally and theoretically. Samples of different ultra-low-k SiOCH films …

SiOCH ULK films with k-value from 2.5 to 2.1 and porosity from 24 to 40% were etched in
CHF 3, CHF 3+ Ar, CF 4 and CF 4+ Ar plasmas at+ 15...− 120 C with and without bias being …

This study is dedicated to an analysis of the etch mechanisms of SiOCH, SiO 2 and SiCH in
fluorocarbon plasmas. The etching of these materials is performed on blanket wafers in a …

We have investigated the concentration of fluorine in a newly formed film, which is located
on the etched surface during modification of thermal silicon dioxide layer in reactive-ion …

The reactive ion etching (RIE) of Si and SiO2 in CF4 plasma is considered. The
dependences of RIE rates of Si and SiO2 on pressure have maxima due to the presence of …

The investigation of both etching and damage mechanisms for SiOC thin films treated in Ar
and CF 4 plasma was carried out. It was found that CF 4 plasmа provides systematically …

This work focuses on the etching of different porous methylsilsesquioxane materials (spin on
SiOCH, k= 2.2) with different porosity (30%, 40% and 50%) in fluorocarbon-based plasmas …

The etching of Si (100) is studied quantitatively in a molecular beam setup. After exposing
the silicon surface to XeF2 doses between 102 and 104 monolayers (MLs) of XeF2, thermal …

In this article, the authors focus on the profiles formed by high-aspect-ratio deep Si etching
with SF 6/O 2 plasma mixtures. One of the most serious problems for deep Si etching …