We show that a number of transport properties in topological insulator (TI) Bi 2 Se 3 exhibit
striking thickness dependences over a range of up to five orders of thickness (3 nm–170 …

With high quality topological insulator Bi 2 Se 3 thin films, we report thickness-independent
transport properties over wide thickness ranges. Conductance remained nominally constant …

We report a transport study of ultrathin Bi 2 Se 3 topological insulators with thickness from
one quintuple layer to six quintuple layers grown on sapphire by molecular beam epitaxy. At …

We consider in our work single crystal thin films of Bi 2 Se 3, grown by molecular beam
epitaxy, both with and without Pb doping. Angle-resolved photoemission data demonstrate …

We study the low-temperature transport properties of Bi2Se3 thin films grown by magnetron
sputtering. A positive magnetoresistance resulting from the weak antilocalization (WAL) …

Topological insulators (TIs) are predicted to be composed of an insulating bulk state along
with conducting channels on the boundary of the material. In Bi2Se3, however, the Fermi …

The two-dimensional surface of the three-dimensional topological insulator is in the
symplectic universality class and should exhibit perfect weak antilocalization reflected in …

Transient reflectivity measurements of thin films, ranging from 6 to 40 nm in thickness, of the
topological insulator Bi 2 Se 3 reveal a strong dependence of the carrier relaxation time on …

We report transport studies on magnetically doped Bi 2 Se 3 topological insulator ultrathin
films grown by molecular beam epitaxy. The magnetotransport behavior exhibits a …

We study coherent electronic transport in charge-density-tunable microdevices patterned
from thin films of the topological insulator (TI) Bi 2 Se 3. The devices exhibit pronounced …