We present Raman scattering measurements on wurtzite InN over a temperature range from
80 to 660 K. To investigate all phonon modes of the wurtzite structure, measurements were …

The novel use of resonant Raman spectroscopy to elucidate the band gap of InN is
illustrated in a study of MBE‐grown films. This technique can distinguish between electronic …

The interaction between carriers and polar phonons in InN is investigated using Raman
spectroscopy. An irreversible broadening and redshift of the 595 cm− 1 A 1 (LO)-like phonon …

Longitudinal optical phonons in InN have been studied by time-resolved Raman
spectroscopy on a subpicosecond time scale. The lifetimes of both the A 1 (LO) and E 1 (LO) …

Coherent phonon spectroscopy of wurtzite InN epitaxial thin films was carried out with time-
resolved second-harmonic generation technique. In addition to the bulk A 1 (LO) phonon …

We report on the Raman analysis of A 1 (LO)(longitudinal optical) and E 2 phonon lifetimes
in InN and their temperature dependence from 80 to 700 K. Our experimental results show …

Coherent phonon spectroscopy of a high-quality InN epitaxial layer is carried out using time-
resolved second-harmonic generation. A coherent longitudinal optical phonon and plasmon …

We have studied plasmon-longitudinal optical (LO) phonon coupled modes by means of
Raman scattering in n-type InN layers grown by metalorganic vapor phase epitaxy, for …

We present the results of a detailed study of the first‐and second‐order Raman scattering
and IR reflection from hexagonal InN layers grown on (0001) and (11‐02) sapphire …

The carrier concentration dependence of the interaction between free carriers and
longitudinal optical (LO) phonons of InN is studied by Raman scattering and Fourier …