Dark Current Mechanism in Bulk GaInNAs Lattice Matched to GaAs
LJJ Tan, WM Soong, JPR David… - IEEE transactions on …, 2010 - ieeexplore.ieee.org
The reverse-bias current-voltage characteristics of a series of Ga 1-x ln x N y As 1-y diodes
with bandgap of between 0.87 and 1.04 eV are reported. At low bias, diffusion and …
with bandgap of between 0.87 and 1.04 eV are reported. At low bias, diffusion and …
Trap-dominated minority-carrier recombination in GaInNAs pn junctions
We use dark current–voltage measurements on GaInNAs pn junctions as a direct probe of
the dominant recombination mechanism in this material. The dark current is dominated by …
the dominant recombination mechanism in this material. The dark current is dominated by …
Defect-induced trap-assisted tunneling current in GaInNAs grown on GaAs substrate
We present the reverse-bias current-voltage and deep-level transient spectroscopy (DLTS)
characteristics of a Ga 0.90 In 0.10 N 0.033 As 0.967∕ GaAs positive-intrinsic-negative …
characteristics of a Ga 0.90 In 0.10 N 0.033 As 0.967∕ GaAs positive-intrinsic-negative …
Current-voltage characteristics of lattice-mismatched GaInAs (n+)/GaAs (p) diodes including thermal annealing effects
ZC Huang, CR Wie - Solid-state electronics, 1993 - Elsevier
Current transport mechanisms and the effects of in-plane lattice-mismatch and thermal
annealing were studied for Ga 0.92 In 0.08 As (n+)/GaAs (p) heterojunctions. We applied …
annealing were studied for Ga 0.92 In 0.08 As (n+)/GaAs (p) heterojunctions. We applied …
Thick lattice-matched GaInNAs films in photodetector applications
D Jackrel, H Yuen, S Bank, M Wistey… - Semiconductor …, 2005 - spiedigitallibrary.org
The dilute-nitride GaInNAs shows great promise in becoming the next choice for long-
wavelength (0.9 to 1.6 μm) photodetector applications due to the ability for it to be grown …
wavelength (0.9 to 1.6 μm) photodetector applications due to the ability for it to be grown …
Deep levels in p-type InGaAsN lattice matched to GaAs
Deep-level transient spectroscopy measurements were utilized to investigate deep-level
defects in metal–organic chemical vapor deposition-grown, unintentionally doped p-type …
defects in metal–organic chemical vapor deposition-grown, unintentionally doped p-type …
Photocurrent of 1 eV GaInNAs lattice-matched to GaAs
The spectral photocurrent response, or quantum efficiency, of GaInNAs lattice-matched to
GaAs with a bandgap of 1eV has been measured in an electrochemical cell in order to …
GaAs with a bandgap of 1eV has been measured in an electrochemical cell in order to …
Polarization effects on gate leakage in InAlN/AlN/GaN high-electron-mobility transistors
Lattice-matched InAlN/AlN/GaN high electron mobility transistors offer high performance with
attractive electronic and thermal properties. For high-voltage applications, gate leakage …
attractive electronic and thermal properties. For high-voltage applications, gate leakage …
GaN/AlGaN superlattice based E-mode hole channel FinFET with Schottky gate
In this work, we report on a GaN/AlGaN superlattice based normally-off hole channel FinFET
devices. A combination of Schottky gate and 60 nm wide fins led to enhancement mode …
devices. A combination of Schottky gate and 60 nm wide fins led to enhancement mode …
Optical gain in GaInNAs and GaInNAsSb quantum wells
JW Ferguson, P Blood, PM Smowton… - IEEE journal of …, 2011 - ieeexplore.ieee.org
We have measured the absorption, gain and spontaneous emission spectra of GalnNAsSb
(3.3% N), GalnNAs (0.5% N) and GalnAs quantum well structures to compare their merits as …
(3.3% N), GalnNAs (0.5% N) and GalnAs quantum well structures to compare their merits as …