In this study, we enlighten about the field effect transistors (FET) and their technologies. As
far as very large integration is concerned, researchers are continuously focusing on scaling …

Complementary metal-oxide-semiconductor (CMOS) technology scaling has been a main
key for continuous progress in silicon-based semiconductor industry over the past three …

Although Si MOS devices have dominated the integrated circuit applications over the four
decades, it has been anticipated that the development of CMOS would reach its limits after …

We have carried out extensive numerical modeling of double-gate, nanoscale silicon n-
metal oxide semiconductor field effect transistors (MOSFETs) with ultrathin, intrinsic …

The down-scaling is still the most important and effective way for achieving the high-
performance logic CMOS operation with low power, regardless of its concern for the …

This work covers the impact of dual metal gate engineered Junctionless MOSFET with
various high-k dielectric in Nanoscale circuits for low power applications. Due to gate …

This review paper explores considerations for ultimate CMOS transistor scaling. Transistor
architectures such as extremely thin silicon-on-insulator and FinFET (and related …

Silicon technology continues to progress, but device scaling is rapidly taking the metal oxide
semiconductor field-effect transistor (MOSFET) to its limit. When MOS technology was …