Thermal strain relaxation of GaAs overgrown on nanovoid based Ge/Si substrate
The integration of high quality III-V materials-based devices on the Si platform is considered
as an enabling path towards achieving the long-standing goal of creating low-cost/high …
as an enabling path towards achieving the long-standing goal of creating low-cost/high …
Investigations on Thermal Stress Relief Mechanism Using Air-gapped Sio2 Nanotemplates During Epitaxial Growth of Ge on Si and Corresponding Hole Mobility …
We demonstrate the implementation of air-gapped SiO2 nanotemplates embedded in
epitaxially grown Ge on Si for relieving stress caused by the thermal expansion coefficient …
epitaxially grown Ge on Si for relieving stress caused by the thermal expansion coefficient …
Growth of highly tensile-strained Ge on relaxed InxGa1− xAs by metal-organic chemical vapor deposition
Highly tensile-strained Ge thin films and quantum dots have the potential to be implemented
for high mobility metal-oxide-semiconductor field-effect transistor channels and long …
for high mobility metal-oxide-semiconductor field-effect transistor channels and long …
Strong enhancement of direct transition photoluminescence at room temperature for highly tensile-strained Ge decorated using 5 nm gold nanoparticles
Strain engineering of germanium has recently attracted tremendous research interest. The
primary goal of this approach is to exploit mechanical strain to tune the electrical and optical …
primary goal of this approach is to exploit mechanical strain to tune the electrical and optical …
Selective Ge heteroepitaxy on free-standing Si (001) nanopatterns: a combined Raman, transmission electron microscopy, and finite element method study
G Kozlowski, Y Yamamoto, J Bauer… - Journal of Applied …, 2011 - pubs.aip.org
We report on Ge selectively grown by chemical vapor deposition on free-standing Si (001)
nanostructures for future photonic applications. Si (001) substrate is patterned in the form of …
nanostructures for future photonic applications. Si (001) substrate is patterned in the form of …
Voided Ge/Si Platform to Integrate III-V Materials on Si
High-quality germanium epilayers on Si with low threadingdislocation densities are
achieved by self-assembling nanovoids inside the Ge layer. This consists on the formation of …
achieved by self-assembling nanovoids inside the Ge layer. This consists on the formation of …
Ultra-Low Dislocation Ge on Silicon Virtual Substrate: New Insights from Crystal Plasticity Simulations
Abstract By sintering porous Si/Ge films, researchers were able to create high-quality
germanium (Ge) epilayers on silicon (Si) with low threading dislocation density. The …
germanium (Ge) epilayers on silicon (Si) with low threading dislocation density. The …
Uprooting defects to enable high-performance III–V optoelectronic devices on silicon
The monolithic integration of III-V compound semiconductor devices with silicon presents
physical and technological challenges, linked to the creation of defects during the deposition …
physical and technological challenges, linked to the creation of defects during the deposition …
Reduced thermal conductivity of epitaxial GaAs on Si due to symmetry-breaking biaxial strain
Epitaxial growth of III-V semiconductors on Si is a promising route for silicon photonics.
Threading dislocations and the residual thermal stress generated during growth are …
Threading dislocations and the residual thermal stress generated during growth are …
Defect reduction of Ge on Si by selective epitaxy and hydrogen annealing
We demonstrate a promising approach for the monolithic integration of Ge-based
nanoelectronics and nanophotonics with Silicon: the selective deposition of Ge on Si by …
nanoelectronics and nanophotonics with Silicon: the selective deposition of Ge on Si by …