Negative-tone imaging with EUV exposure toward 13 nm hp
H Tsubaki, W Nihashi, T Tsuchihashi… - Journal of …, 2016 - jstage.jst.go.jp
Negative-tone imaging (NTI) with EUV exposure has major advantages with respect to line-
width roughness (LWR) and resolution due in part to polymer swelling and favorable …
width roughness (LWR) and resolution due in part to polymer swelling and favorable …
Recent progress of Negative-tone imaging Process and Materials with EUV exposure
T Fujimori, T Tsuchihashi, T Itani - Journal of Photopolymer Science …, 2015 - jstage.jst.go.jp
This study describes the recent progress of negative-tone imaging with EUV exposure (EUV-
NTI) compared with positive-tone development (PTD). NTI uses organic solvent-based …
NTI) compared with positive-tone development (PTD). NTI uses organic solvent-based …
Negative-tone imaging with EUV exposure
H Tsubaki, W Nihashi, T Tsuchihashi… - Journal of …, 2015 - jstage.jst.go.jp
Manipulation of dissolution properties by changing organic solvent developer and rinse
material provides a novel technology to obtain fine pattern beyond the limitation of imaging …
material provides a novel technology to obtain fine pattern beyond the limitation of imaging …
Recent progress of negative-tone imaging with EUV exposure
T Fujimori, T Tsuchihashi, T Itani - Advances in Patterning …, 2015 - spiedigitallibrary.org
This study describes the recent progress of negative-tone imaging with EUV exposure (EUV-
NTI) compared with positive-tone development (PTD). NTI uses organic solvent-based …
NTI) compared with positive-tone development (PTD). NTI uses organic solvent-based …
Negative tone imaging process and materials for EUV lithography
S Tarutani, W Nihashi, S Hirano… - Journal of …, 2013 - jstage.jst.go.jp
The advantages of NTI process in EUV is demonstrated by optical simulation method for
0.25 NA and 0.33 NA illumination system with view point of optical aerial image quality and …
0.25 NA and 0.33 NA illumination system with view point of optical aerial image quality and …
Negative-tone imaging with EUV exposure for 14nm hp and beyond
H Tsubaki, W Nihashi, T Tsuchihashi… - Extreme Ultraviolet …, 2015 - spiedigitallibrary.org
Manipulation of dissolution properties by changing organic solvent developer and rinse
material provides a novel technology to obtain fine pattern beyond the limitation of imaging …
material provides a novel technology to obtain fine pattern beyond the limitation of imaging …
Negative tone imaging process and materials for EUV lighography
S Tarutani, W Nihashi, S Hirano… - Advances in Resist …, 2013 - spiedigitallibrary.org
The advantages of NTI process in EUV is demonstrated by optical simulation method for
0.25 NA and 0.33 NA illumination system with view point of optical aerial image quality and …
0.25 NA and 0.33 NA illumination system with view point of optical aerial image quality and …
Challenges for immersion lithography extension based on negative tone imaging (NTI) process
M Shirakawa, K Kato, H Furutani… - Journal of Photopolymer …, 2016 - jstage.jst.go.jp
Negative tone imaging (NTI) process is a method for obtaining a negative-tone reversal
pattern by developing with an organic solvent. As NTI process can break-through the …
pattern by developing with an organic solvent. As NTI process can break-through the …
Novel EUV resist materials design for 14 nm half pitch and below
S Tarutani, H Tsubaki, T Fujimori… - Journal of …, 2014 - jstage.jst.go.jp
Polymers with a different Tg and activation energy were prepared to clarify influences of acid
diffusion on resolution at 15 nm half-pitch (hp) and 14 nm hp using a EUV micro-field …
diffusion on resolution at 15 nm half-pitch (hp) and 14 nm hp using a EUV micro-field …
Negative-tone resists for EUV lithography
M Suzuki, Y Kim, Y Her, H Wu, K Si… - … and Processes XL, 2023 - spiedigitallibrary.org
The adoption of extreme ultraviolet lithography (EUVL) has enabled the manufacturing of
semiconductor chips with circuit dimensions below 20nm. Photoresists used in the current …
semiconductor chips with circuit dimensions below 20nm. Photoresists used in the current …