An overview on InN nanowires, fabricated using either a catalyst-free molecular beam
epitaxy method or a catalyst assisted chemical vapor deposition process, is provided …

InN nanowires and faceted hexagonal InN nanotubes are synthesized by catalyst-free
chemical vapor deposition at different temperatures. Both have the single crystalline wurtzite …

High quality, well-separated, homogeneous sizes and high aspect ratio Si-doped InN
nanowires (NWs) were grown by catalyst-free molecular beam epitaxy (MBE) after …

Morphological, optical and transport properties of GaN and InN nanowires grown by
molecular beam epitaxy (MBE) have been studied. The differences between the two …

In this paper, the achievement of nearly intrinsic InN nanowire is reported. With the use of an
in situ deposited In seeding layer, nearly defect‐free, non‐tapered InN nanowires are grown …

In this chapter, we review the recent progress made on the growth, characterization, and
device applications of InN nanowires. Early research on InN nanowires is limited by their n …

We report on a systematic growth study of the nucleation process of InN nanowires on Si (1
1 1) substrates using plasma assisted molecular beam epitaxy (PAMBE). Samples are …

The authors report on the growth and characterization of high quality InN nanowires on Si
(111) by radio frequency plasma-assisted molecular beam epitaxy. InN nanowires with …

We have performed a detailed investigation of the molecular beam epitaxial growth and
characterization of InN nanowires spontaneously formed on Si (111) substrates under …

Indium nitride nanowires (NWs) grown by a catalyst-free, vapor-solid method are shown to
be high-purity, single-crystal hexagonal wurtzite and intrinsic n type with uniform diameters …