Thin‐film solar cells with Cu (In, Ga) Se2 (CIGS) absorber layers ranging from 1.8 to 0.15 μm
in thickness were fabricated by co‐evaporation, with both homogeneous and Ga/(Ga+ In) …

Abstract Recent breakthroughs in Cu (In, Ga) Se2 (CIGS) thin film solar cell energy
conversion efficiency are related to the application of a potassium fluoride post‐deposition …

We report on the interaction between intentional potassium doping of thin film Cu (In, Ga)
Se2 (CIGS) solar cells, CIGS absorber composition, and device efficiency. Up to now high …

CuIn, GaSe2 CIGS absorber layers for thin-film solar cells were grown without sodium. Na
was diffused into some of the absorbers after growth, which led to strongly improved device …

Bandgap engineering in Cu (In, Ga) Se2 (CIGS) based solar cells is an interesting tool to
improve their performance. We fabricate and analyse various kinds of gallium gradings in …

Abstract Alkali‐free Cu (In, Ga) Se2 (CIGS) absorbers grown on Mo‐coated alumina (Al2O3)
substrates were doped with potassium (K) after CIGS growth by a potassium fluoride (KF) …

Recent progress in the development of high-efficiency solar cells based on Cu (In, Ga) Se 2
at our institute is reviewed. The post-deposition treatment with alkali elements (PDT) has …

We fabricate a series of CIGS absorber layers with Ga-contents x= Ga/(In+ Ga) ranging from
x= 0 (CuInSe2) to 1 (CuGaSe2) by single layer coevaporation. The open circuit voltages Voc …

The effects of conduction band grading in a Cu (In, Ga) Se 2 (CIGS) thin film with an average
bandgap of 1.4 eV on solar cell performance were investigated by changing the minimum …

A simulation study of a Cu (In 1− x Ga x) Se 2 (CIGS) thin film solar cell has been carried out
with maximum efficiency of 24.27%(V oc= 0.856 V, J sc= 33.09 mA/cm 2 and FF= 85.73%) …