NAND flash memory is ubiquitous in everyday life today because its capacity has
continuously increased and cost has continuously decreased over decades. This positive …

NAND flash memory reliability continues to degrade as the memory is scaled down and
more bits are programmed per cell. A key contributor to this reduced reliability is read …

Continued scaling of NAND flash memory to smaller process technology nodes decreases
its reliability, necessitating more sophisticated mechanisms to correctly read stored data …

In this article, we summarize our major error characterization results and mitigation
techniques for NAND flash memory. We first provide a characterization of errors that occur in …

Retention errors, caused by charge leakage over time, are the dominant source of flash
memory errors. Understanding, characterizing, and reducing retention errors can …

As NAND flash memory manufacturers scale down to smaller process technology nodes and
store more bits per cell, reliability and endurance of flash memory reduce. Wear-leveling and …

With the continued scaling of NAND flash and multi-level cell technology, flash-based
storage has gained widespread use in systems ranging from mobile platforms to enterprise …

With the appealing storage-density advantage, multilevel-per-cell (MLC) NAND Flash
memory that stores more than 1 bit in each memory cell now largely dominates the global …

As technology continues to scale down, NAND Flash memory has been increasingly relying
on error-correction codes (ECCs) to ensure the overall data storage integrity. Although …

NAND flash memories have bit errors that are corrected by error-correction codes (ECC). We
present raw error data from multi-level-cell devices from four manufacturers, identify the root …