[PDF][PDF] Germanium-on-nothing for epitaxial liftoff of GaAs solar cells

S Park, J Simon, KL Schulte, AJ Ptak, JS Wi, DL Young… - Joule, 2019 - cell.com
Solar cells from III-V materials offer outstanding light conversion efficiency and power
densities and have a proven reliability record. Nevertheless, the utilization of III-V devices …

Wafer‐scale Ge epitaxial foils grown at high growth rates and released from porous substrates for triple‐junction solar cells

V Depauw, C Porret, M Moelants… - Progress in …, 2023 - Wiley Online Library
Germanium is listed as a critical raw material, and for environmental and economic
sustainability reasons, strategies for lower consumption must be implemented. A promising …

III-V material growth on electrochemically porosified Ge substrates

E Winter, W Schreiber, P Schygulla, PL Souza… - Journal of Crystal …, 2023 - Elsevier
III-V semiconductor materials for high-efficiency multi-junction solar cells are often grown on
germanium (Ge) substrates. However, apart from being considered as a rare element, Ge …

Flexible GaAs solar cells on roll-to-roll processed epitaxial Ge films on metal foils: A route towards low-cost and high-performance III–V photovoltaics

P Dutta, M Rathi, D Khatiwada, S Sun, Y Yao… - Energy & …, 2019 - pubs.rsc.org
In this report, we describe a unique roll-to-roll plasma-enhanced chemical vapor deposition
(R2R-PECVD) technique to grow high-quality single-crystalline-like Ge films on flexible …

GaInP∕ GaAs dual junction solar cells on Ge∕ Si epitaxial templates

MJ Archer, DC Law, S Mesropian, M Haddad… - Applied Physics …, 2008 - pubs.aip.org
Large area, crack-free Ga In P∕ Ga As double junction solar cells were grown by metal
organic chemical vapor deposition on Ge∕ Si templates fabricated using wafer bonding and …

Ultrathin Flexible Ge Solar Cells for Lattice‐Matched Thin‐Film InGaP/(In) GaAs/Ge Tandem Solar Cells

S Moon, K Kim, Y Kim, HK Kang, KH Park, J Lee - Solar RRL, 2023 - Wiley Online Library
Ultrathin Ge single‐junction (1J) solar cells transferred onto a flexible substrate are
envisioned to open up a novel lattice‐matched thin‐film InGaP/(In) GaAs/Ge tandem solar …

Toward low-cost 4-terminal GaAs//Si tandem solar cells

KT VanSant, J Simon, JF Geisz… - ACS Applied Energy …, 2019 - ACS Publications
Mechanically stacked III–V-on-Si (III–V//Si) tandem solar cells have demonstrated
efficiencies beyond what can theoretically be achieved by single junction Si solar cells, but …

Ge layer transfer to Si for photovoltaic applications

JM Zahler, CG Ahn, S Zaghi, HA Atwater, C Chu, P Iles - Thin Solid Films, 2002 - Elsevier
We have successfully used hydrophobic direct-wafer bonding, along with H-induced layer
splitting of Ge, to transfer 700-nm-thick, single-crystal Ge (100) films to Si (100) substrates …

GaAs solar cells on nanopatterned Si substrates

M Vaisman, N Jain, Q Li, KM Lau… - IEEE Journal of …, 2018 - ieeexplore.ieee.org
Integrating III-Vs onto Si is a promising route toward tandem photovoltaics and cost
mitigation of III-V substrates. While many III-V/Si photovoltaic integration approaches have …

Cui as a hole-selective contact for gaas solar cells

T Haggren, V Raj, A Haggren, N Gagrani… - … Applied Materials & …, 2022 - ACS Publications
Carrier-selective contacts have emerged as a promising architecture for solar cell
fabrication. In this report, the first hole-selective III–V semiconductor solar cell is …