40 years of research on low-frequency (LF) noise and random-telegraph noise (RTN) in
metallic and semiconducting nanowires (NWs) demonstrate the importance of defects and …

Nanowires (NWs) have recently emerged as a new class of materials demonstrating unique
properties which may completely differ from their bulk counterparts. The main aim of this …

Low-frequency noise (LFN) in n-type silicon nanowire MOSFETs (SNWTs) is investigated in
this letter. The drain-current spectral density exhibits significant dispersion of up to five …

Nanowire geometries are leading contenders for future low-power transistor design. In this
study, low-frequency noise is measured and evaluated in highly scaled III-V nanowire metal …

The low frequency (1∕ f) noise in single Sn O 2 nanowire transistors was investigated to
access semiconductor-dielectric interface quality. The amplitude of the current noise …

The low frequency noise performance of Gate-All-Around Nanowire (NW) or Nanosheet
(NS) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) is investigated, taking …

From its discovery in 1925 by Johnson until the late 1960s, it was generally agreed that low-
frequency excess (1/f) noise in electronic materials and devices is caused primarily by …

We present a detailed analysis of low-frequency noise (LFN) measurements in vertical III-V
nanowire tunnel field-effect transistors (TFETs), which help to understand the limiting factors …

Flicker or 1/f noise in metal-oxide-semiconductor field-effect transistors (MOSFETs) has
been identified as the main source of noise at low frequency. It often originates from an …

We fabricated ZnO nanowire field effect transistors (FETs) and systematically characterized
their low frequency (f) noise properties. The obtained noise power spectra showed a …