Improved Charge Carrier Transport Across Grain Boundaries in N‐type PbSe by Dopant Segregation

H Zhang, M Shen, C Stenz, C Teichrib, R Wu… - Small …, 2024 - Wiley Online Library
Doping is an important and routine method to tune the properties of semiconductors.
Dopants accumulated at grain boundaries (GBs) can exert a profound influence on …

Strong charge carrier scattering at grain boundaries of PbTe caused by the collapse of metavalent bonding

R Wu, Y Yu, S Jia, C Zhou, O Cojocaru-Mirédin… - Nature …, 2023 - nature.com
Grain boundaries (GBs) play a significant role in controlling the transport of mass, heat and
charge. To unravel the mechanisms underpinning the charge carrier scattering at GBs …

Charge Transport Modulation in PbSe Nanocrystal Solids by AuxAg1–x Nanoparticle Doping

H Yang, E Wong, T Zhao, JD Lee, HL Xin, M Chi… - ACS …, 2018 - ACS Publications
Nanocrystal (NC) solids are an exciting class of materials, whose physical properties are
tunable by choice of the NCs as well as the strength of the interparticle coupling. One can …

Evidence of Enhanced Carrier Collection in Cu(In,Ga)Se2 Grain Boundaries: Correlation with Microstructure

M Raghuwanshi, B Thöner, P Soni… - … applied materials & …, 2018 - ACS Publications
Solar cells containing a polycrystalline Cu (In, Ga) Se2 absorber outperform the ones
containing a monocrystalline absorber, showing a record efficiency of 22.9%. However, the …

Compositionally induced valence-band offset at the grain boundary of polycrystalline chalcopyrites creates a hole barrier

C Persson, A Zunger - Applied Physics Letters, 2005 - pubs.aip.org
First-principles calculations of model grain boundaries (GBs) in CuInSe 2 and CaGaSe 2
show that cation-terminated GBs have a valence-band offset with respect to the grain interior …

[PDF][PDF] Metavalent bonding impacts charge carrier transport across grain boundaries

Y Yu, M Wuttig - Nano Res. Energy, 2023 - juser.fz-juelich.de
Understanding the mechanisms underpinning the charge carrier scattering at grain
boundaries is crucial to design thermoelectrics and other electronic materials. Yet, this is a …

Nanocrystal shape and nanojunction effects on electron transport in nanocrystal-assembled bulks

SC Chiu, JS Jhang, YF Lin, SY Hsu, J Fang, WB Jian - Nanoscale, 2013 - pubs.rsc.org
Bulk nanostructured materials are made from the assembly of octahedral PbSe
nanocrystals. After thermal annealing, the artificial bulk demonstrates a large difference in …

Engineering Grain Boundaries in Cu2ZnSnSe4 for Better Cell Performance: A First‐Principle Study

WJ Yin, Y Wu, SH Wei, R Noufi… - Advanced Energy …, 2014 - Wiley Online Library
Through first‐principle density functional theory (DFT) calculations, the atomic structure and
electronic properties of intrinsic and passivated Σ3 (114) grain boundaries (GBs) in …

Doping-induced grain refinement contributes to enhanced thermoelectric performance of n-type PbSe at room temperature

C Zhao, Q Deng, W Yuan, X An, W Su, Z He… - Journal of Materials …, 2024 - pubs.rsc.org
Grain refinement is a successful strategy to depress lattice thermal conductivity and improve
the performance of thermoelectric materials, while it often requires complex processing …

Grain Boundaries in Cu(In, Ga)Se2: A Review of Composition–Electronic Property Relationships by Atom Probe Tomography and Correlative Microscopy

O Cojocaru‐Mirédin, M Raghuwanshi… - Advanced Functional …, 2021 - Wiley Online Library
Abstract Cu (In, Ga) Se2 thin‐film solar cells have attracted significant research interest in
recent decades due to their high efficiency in converting solar energy into electricity for …