Impact of interface trap charge on analog/rf parameters of novel heterogeneous gate dielectric tri-metal gate finfet
S Saraswat, DS Yadav - 2021 International Conference on …, 2021 - ieeexplore.ieee.org
In this script, an innovative structure is introduced to optimize TMG FinFET by employing
dielectric material engineering. In this method, HfO 2 is placed towards the source side, with …
dielectric material engineering. In this method, HfO 2 is placed towards the source side, with …
Assessment of analog/RF performances for 10 nm Tri-metal Gate FinFET
GP Nikhil, S Routray… - 2020 4th IEEE Electron …, 2020 - ieeexplore.ieee.org
Reduction in parasitic capacitance and resistance in FinFET is quite necessary in order to
achieve high performance. In this paper, an intensive study on structural advancement in …
achieve high performance. In this paper, an intensive study on structural advancement in …
Performance analysis of tmg finfets for low power application with improved analog/rf characteristics
In this manuscript, a 3D simulation model of FinFET is proposed. The device is designed in
such a manner that the gate is made with three metals of different work functions, so it's …
such a manner that the gate is made with three metals of different work functions, so it's …
Study of dual-material gate (DMG) FinFET using three-dimensional numerical simulation
DS Havaldar, A Dasgupta… - International Journal of …, 2006 - World Scientific
In this work, the novel characteristics of a FinFET with dual-material gate (DMG) are
explored theoretically using a 3D numerical simulator and compared with those of a single …
explored theoretically using a 3D numerical simulator and compared with those of a single …
Impact of High-k Dielectric Material on Ultra-Short-DG-FinFET Performance
N Bourahla, B Hadri, NEI Boukortt… - … Systems and Services …, 2021 - ieeexplore.ieee.org
The miniaturization of the SOI-MOSFET transistor reducesthe gate electrostatic control and
reliability of the integrated circuit (IC). The fabrication of the transistor was reaching 7nm, but …
reliability of the integrated circuit (IC). The fabrication of the transistor was reaching 7nm, but …
Interface trap charges and their impact on linearity and rf performance metrics for a heterodielectric dual metal gate gasb-si nanowire tfet
We have studied impact of Interface Trap Charges on Hetero-dielectric Dual Metal Gate
GaSb-Si NWTFET (HD-NWTFET) device performance. Variations in DC performance …
GaSb-Si NWTFET (HD-NWTFET) device performance. Variations in DC performance …
[PDF][PDF] Improved Performance Analysis and Design of Dual Metal Gate FinFET for Low Power Digital Applications
ABSTRACT A High-K Dielectric Dual Metal Gate FinFET (DMG-FinFET) is proposed in this
work to improve the drain current and electrical characteristics of the device. The proposed …
work to improve the drain current and electrical characteristics of the device. The proposed …
Effects of the Gate Dielectric Material on the Performance of a 14-nm SOI FinFET
Fin field-effect transistors (FinFETs) are a type of device that has received great attention in
recent years, owing to their ability to scale down, low cost, and high efficiency for advanced …
recent years, owing to their ability to scale down, low cost, and high efficiency for advanced …
Design of high-K dielectric HSS-DMG Junctionless FinFET using Hetero GOS for nanoscale application
This article presents a detailed investigation of the High-K dielectric horizontal stack spacer
(HSS) dual material gate junction-less FinFET device for analog and RF application using …
(HSS) dual material gate junction-less FinFET device for analog and RF application using …
Impact of gate dielectric on overall electrical performance of Quadruple gate FinFET
Due to better scalability and more immunity to short channel effects in recent technology
nodes, Quadruple gate FinFET is introduced as a potential candidate among multiple gate …
nodes, Quadruple gate FinFET is introduced as a potential candidate among multiple gate …