The etch characteristics of silicon trenches masked with various SiO 2/Si 3 N 4 pattern
distances were investigated using synchronously and asynchronously pulse modes in …

The fabrication of high aspect ratio Si trenches has been becoming difficult due to the
decrease in critical dimension (CD) to deep nanoscale. Especially, aspect ratio dependent …

In order to study the effects of bias pulsing on the etching characteristics of a silicon dioxide
(SiO2) layer using multi-level hard mask (MLHM) structures of ArF photoresist/bottom anti …

The etching rate in silicon deep reactive ion etching (RIE) is related to pattern geometry and
a frequently seen defect, RIE lag, appears in feature sizes up to hundreds of micrometers …

In this study, 0.3–0.5 μm deep and 0.3 μm wide silicon trenches were etched using Cl2/10%-
N2 and Cl2/50%-HBr inductively coupled plasmas, the physical and electrical defects …

Silicon shallow trenches applied to the shallow trench isolation of integrated circuits were
etched using planar inductively coupled Cl 2 and HBr/Cl 2 plasmas and the effects of …

In this study, we investigated the etching parameter dependence of the reactive ion etch
(RIE) lag of nanometer silicon trenches using HBr/O 2 plasma in an inductively coupled …

Pillar formation in SiC via holes fabricated by inductively coupled plasma etching at a high
etch rate in the order of around 2 μ m/min using SF 6/O 2 was studied by comparing samples …

The etch characteristics of Si and TiO 2 nanostructures for optical devices were investigated
using pulse biased inductively coupled plasmas (ICP) with SF 6/C 4 F 8/Ar and BCl 3/Ar …

For the Bosch deep silicon dry etch process with SF 6–C 4 F 8 a quantitative approach is
developed. Essential plasma surface interactions and the transport properties of ions and …