[HTML][HTML] Wafer-scale Ge freestanding membranes for lightweight and flexible optoelectronics

T Hanuš, B Ilahi, A Chapotot, H Pelletier, J Cho… - Materials Today …, 2023 - Elsevier
Semiconductor-based freestanding membranes (FSM) have recently emerged as a highly
promising area of advanced materials research. Their unique properties, such as lightweight …

[HTML][HTML] Wafer-scale detachable monocrystalline germanium nanomembranes for the growth of III–V materials and substrate reuse

N Paupy, ZO Elhmaidi, A Chapotot, T Hanuš… - Nanoscale …, 2023 - pubs.rsc.org
Germanium (Ge) is increasingly used as a substrate for high-performance optoelectronics,
photovoltaics, and electronic devices. These devices are usually grown on thick and rigid Ge …

[HTML][HTML] Recent advances in single crystal narrow band-gap semiconductor nanomembranes and their flexible optoelectronic device applications: Ge, GeSn, InGaAs …

S An, HJ Park, M Kim - Journal of Materials Chemistry C, 2023 - pubs.rsc.org
Flexible optoelectronics have attracted much attention in recent years for their potential
applications in healthcare and wearable devices. Narrow bandgap (NBG) semiconductor …

All‐Group IV Transferable Membrane Mid‐Infrared Photodetectors

MRM Atalla, S Assali, A Attiaoui… - Advanced Functional …, 2021 - Wiley Online Library
Semiconductor membranes emerged as a versatile class of nanomaterials to control lattice
strain and engineer complex heterostructures enabling a variety of innovative applications …

Graphene buffer layer on SiC as a release layer for high-quality freestanding semiconductor membranes

K Qiao, Y Liu, C Kim, RJ Molnar, T Osadchy, W Li… - Nano …, 2021 - ACS Publications
Free-standing crystalline membranes are highly desirable owing to recent developments in
heterogeneous integration of dissimilar materials. Van der Waals (vdW) epitaxy enables the …

Strained germanium thin film membrane on silicon substrate for optoelectronics

D Nam, D Sukhdeo, A Roy, K Balram, SL Cheng… - Optics express, 2011 - opg.optica.org
This work presents a novel method to introduce a sustainable biaxial tensile strain larger
than 1% in a thin Ge membrane using a stressor layer integrated on a Si substrate. Raman …

Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga 2 O 3, and diamond

M Kim, JH Seo, U Singisetti, Z Ma - Journal of Materials Chemistry C, 2017 - pubs.rsc.org
Free-standing single crystalline semiconductor membranes have gained intensive attention
over the last few years due to their versatile usage in many applications. This material …

[PDF][PDF] Germanium-on-nothing for epitaxial liftoff of GaAs solar cells

S Park, J Simon, KL Schulte, AJ Ptak, JS Wi, DL Young… - Joule, 2019 - cell.com
Solar cells from III-V materials offer outstanding light conversion efficiency and power
densities and have a proven reliability record. Nevertheless, the utilization of III-V devices …

Toward Large-Scale Ga2O3 Membranes via Quasi-Van Der Waals Epitaxy on Epitaxial Graphene Layers

JH Min, KH Li, YH Kim, JW Min, CH Kang… - … Applied Materials & …, 2021 - ACS Publications
Epitaxial growth using graphene (GR), weakly bonded by van der Waals force, is a subject
of interest for fabricating technologically important semiconductor membranes. Such …

Ge layer transfer to Si for photovoltaic applications

JM Zahler, CG Ahn, S Zaghi, HA Atwater, C Chu, P Iles - Thin Solid Films, 2002 - Elsevier
We have successfully used hydrophobic direct-wafer bonding, along with H-induced layer
splitting of Ge, to transfer 700-nm-thick, single-crystal Ge (100) films to Si (100) substrates …