We present two-wave mixing results obtained with CdSSe: V crystals. A large photorefractive
gain of 0.24 cm-1 was observed at 633 nm with an optical intensity of 60 mW/cm2 and a …

We present two-wave mixing results obtained with a CdS (0.8) Se (0.2): V crystal. The CdS
(0.8) Se (0.2): V crystal was grown by physical vapor transport (PVT) along with a …

A large photorefractive effect was measured in CdS 0.8 Se 0.2: V and Cd 0.55 Mn 0.45 Te: V
ternary crystals which shows promise for many device applications such as optical signal …

Abstract CdS_xSe_1-x: V (x= 0.8) has recently been shown to be a photorefractive material,
with a gain comparable to CdTe: V. CdS_xSe_1-x: V is useful in the range from. 7 to 1.5 …

Summary form only given. Photorefractive semiconductors, with their faster response speed
than oxide materials, are attractive candidates for a variety of applications ranging from …

We present two-wave mixing result obtained with a CdMnTe: V crystal. A photorefractive
gain coefficient of 0.20/cm was observed at 633 nm with the signal-to-pump ratio being of …

Abstract Single crystal Zn_. 04Cd_. 96Te was grown by physical vapor transport (PVT)
method and doped by annealing with TiTe 2 powder at 600 C for six days. Photorefractive …

ABSTRACT Undoped and doped CdS08 Se02 crystals were grown by physical vapor
transport (PVT). The selected dopant was vanadium at a nominal concentration of I 50 ppm …

Undoped and doped CdS 0.8 Se 0.2 crystals were grown by physical vapor transport (PVT).
The selected dopant was vanadium at a nominal concentration of 150 ppm creating for …

Vanadium-doped cadmium telluride ingots were grown by the vertical Bridgman-
Stockbarger method. After shaping, one sample was annealed under cadmium atmosphere …