We report a detailed study on low-frequency 1/f-noise in large-area molecular-beam epitaxy
grown thin (⁠∼ 10 nm) films of topological insulators as a function of temperature, gate …

We report detailed temperature and gate-voltage dependence of 1/f resistance noise in
magnetically doped topological insulators (TI) Cr x (Bi, Sb) 2− x Te 3. The noise is …

Slow intrinsic fluctuations of resistance, also known as the flicker noise or 1/f-noise, in the
surface transport of strong topological insulators (TIs) is a poorly understood phenomenon …

The unique properties of spin-polarized surface or edge states in topological insulators (TIs)
make these quantum coherent systems interesting from the point of view of both …

We report magnetotransport measurements on magnetically doped (Bi, Sb) 2 Te 3 films
grown by molecular beam epitaxy. In Hall bar devices, we observe logarithmic dependence …

Implementing topological insulators as elementary units in quantum technologies requires a
comprehensive understanding of the dephasing mechanisms governing the surface carriers …

Nonideal topological insulator (TI) films in which the bulk states are not insulating due to
unintentional doping exhibit strong surface–bulk coupling. Such surface–bulk coupling can …

We report results of investigation of the low‐frequency excess noise in device channels
made from topological insulators–a new class of materials with a bulk insulating gap and …

An important challenge in the field of topological materials is to carefully disentangle the
electronic transport contribution of the topological surface states from that of the bulk. For Bi …

The surface states of a topological insulator in a fine-tuned magnetic field are ideal
candidates for realizing a topological metal which is protected against disorder. Its …