We report on the temperature dependence of photoluminescence (PL) from self-assembled
InAs/AlAs quantum dots (QDs). In the temperature range of 6–90 K, an abnormal blueshift of …

Two types of InAs self-assembled Quantum dots (QDs) were prepared by Molecular beam
epitaxy. Atomic force microscopy (AFM) measurements showed that, compared to QDs …

We report on the unusual behaviors of the optical properties for self-assembled InAs/GaAs
quantum dots (QDs) by using photoluminescence (PL) spectroscopy. Distinctive double …

Photoluminescence (PL) from InAs self-assembled quantum dots (QD) embedded in the
AlAs matrix was strong and clean around 700 nm. PL efficiency remained quite high at room …

We report a photoluminescence (PL) study on the growth process of self-assembled InAs
quantum dots (QDs) under various growth conditions. Distinctive double-peak feature was …

Ground-state energy of InAs quantum dots (QDs) in the GaAs matrix can be changed
significantly by introducing a thin AlAs layer (1 nm). The photoluminescence (PL) peak …

We report photoluminescence data from three InAs/AlAs quantum dot samples with different
densities and separations, respectively. For medium density the quantum dot related …

We have studied photoluminescence (PL) from single InAs self-assembled quantum dots
(QDs) by micro-PL measurements and, in particular, studied the excitation intensity …

The temperature dependence of the time-resolved photoluminescence (PL) of self-
assembled InAs quantum dots (QDs) with InGaAs covering layers was investigated. The PL …

InAs/InGaAsP quantum dots (QD) grown on InP substrates show strong photoluminescence
(PL) signals, with peaks from 1.4 to 1.6 µm at room temperature. Time-resolved PL …