Carbon incorporation in III-V ternary alloys,(AlGa) As,(AlIn) As and (GaIn) As, for the entire
composition range is investigated using solid-source molecular beam epitaxy. On the binary …

GaAs: C and Al x Ga1− x As: C films, grown by solid‐source molecular‐beam epitaxy with
doping levels beyond 1019 cm− 3, have been studied by high‐resolution double‐crystal x …

Carbon doping of Al x Ga 1− x As with x= 0 to 0.3 has been investigated using
trimethylarsine (TMAs) as the carbon precursor. Carbon concentrations from 5× 10 17 to⋍ …

Abstract Carbon-doped In x Ga 1-x As layers (x= 0∼ 0.96) were grown by metalorganic
molecular beam epitaxy (MOMBE) using trimethylgallium (TMG), solid arsenic (As 4) and …

Abstract Single period (Al, Ga) As/GaAs structures, wherein the GaAs layer is unintentionally
doped and the (Al, Ga) As/GaAs layer is doped with Si, have been grown with molecular …

Abstract GaAs, In 0.53 Ga 0.47 As and Al x Ga 1− x As were grown by metalorganic
molecular beam epitaxy (MOMBE) using triethyl-III sources for group III elements and a solid …

Electrical properties and the donor energy level in Se‐doped n‐Ga1− x Al x As (0⩽ x⩽ 0.82)
prepared by metalorganic chemical vapor deposition have been investigated. The van der …

Inverted single period modulation doped Al x Ga 1-x As/GaAs heterostructures with the
binary compound on top of the ternary, exhibiting enhanced electron mobilities, were grown …

Capacitance and Hall effect measurements in the temperature range 10-300 K were
performed to evaluate the deep and shallow level characteristics of Si-doped n-Al x Ga-x As …

A dilute mixture of CCl 4 in H 2 has recently been shown to be a suitable carbon doping
source for obtaining p-type GaAs grown by metalorganic chemical vapor deposition …