Atomic-or nanometer-scale roughness on feature surfaces has become an important issue
to be resolved in the fabrication of nanoscale devices in industry. Moreover, in some cases …

Atomic-or nanometer-scale surface roughening has been investigated during Si etching in
inductively coupled Cl 2 plasmas, as a function of rf bias power or ion incident energy E i, by …

Atomic-or nanometer-scale surface roughening and rippling during Si etching in high-
density Cl 2 and Cl 2/O 2 plasmas have been investigated by developing a three …

Plasma-induced surface roughening and ripple formation has been studied based on Monte
Carlo simulations of plasma-surface interactions and feature profile evolution during Si …

Effects of initial roughness on the evolution of plasma-induced surface roughness have
been investigated during Si etching in inductively coupled Cl 2 plasmas, as a function of rf …

A three-dimensional atomic-scale cellular model (ASCeM-3D) has been developed to
reproduce the evolution of feature profiles on atomic or nanometer scale during plasma …

A universal, kinetic etch front instability responsible for plasma etching induced roughness is
proposed. The kinetic process of plasma rough etching is modeled based on Kinetic Monte …

Formation mechanisms for profile anomalies such as surface roughness and residue have
been investigated numerically and experimentally for Si etching in Cl2/O2 plasmas. The …

Plasma etching of thin films is essential for microelectronics manufacturing. With current
feature sizes of 35 nm in production and processes for smaller devices being developed, the …

Line edge roughness (LER) on the sidewalls of gate electrodes in metal oxide
semiconductor transistors is one of the most important issues in the manufacturing of modem …